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Koide, Y., Furukawa, A., Zaima, S., Yasuda, Y. (1991) In-situ RHEED study of growth processes in the initial stage of SiGe alloy film deposition by gas source molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 365-370 doi:10.1016/0022-0248(91)90769-2

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Reference TypeJournal (article/letter/editorial)
TitleIn-situ RHEED study of growth processes in the initial stage of SiGe alloy film deposition by gas source molecular beam epitaxy
JournalJournal of Crystal Growth
AuthorsKoide, Y.Author
Furukawa, A.Author
Zaima, S.Author
Yasuda, Y.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90769-2Search in ResearchGate
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Mindat Ref. ID2803965Long-form Identifiermindat:1:5:2803965:7
GUID0
Full ReferenceKoide, Y., Furukawa, A., Zaima, S., Yasuda, Y. (1991) In-situ RHEED study of growth processes in the initial stage of SiGe alloy film deposition by gas source molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 365-370 doi:10.1016/0022-0248(91)90769-2
Plain TextKoide, Y., Furukawa, A., Zaima, S., Yasuda, Y. (1991) In-situ RHEED study of growth processes in the initial stage of SiGe alloy film deposition by gas source molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 365-370 doi:10.1016/0022-0248(91)90769-2
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Yasuda, Y., Itoh, K., Ohshima, N., Koide, Y., Zaima, S. (1993) RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy. Journal of Crystal Growth, 128 (1). 319-326 doi:10.1016/0022-0248(93)90341-s
Koide, Y., Zaima, S., Ohshima, N., Yasuda, Y. (1990) Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy. Journal of Crystal Growth, 99 (1). 254-258 doi:10.1016/0022-0248(90)90522-m
Koide, Y., Zaima, S., Itoh, K., Yasuda, Y. (1992) In-situ RHEED study on the effect of light irradiation on Ge/Si heteroepitaxial growth by GeH4 source MBE. Journal of Crystal Growth, 120 (1). 284-289 doi:10.1016/0022-0248(92)90404-7
Yasuda, Y., Koide, Y., Furukawa, A., Ohshima, N., Zaima, S. (1993) Relationship between growth processes and strain relaxation in Si1−xGexfilms grown on (100)Si‐(2×1) surfaces by gas source molecular beam epitaxy. Journal of Applied Physics, 73 (5). 2288-2293 doi:10.1063/1.353134
Koide, Y., Zaima, S., Itoh, K., Ohshima, N., Yasuda, Y. (1990) Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4source molecular beam epitaxy. Journal of Applied Physics, 68 (5). 2164-2167 doi:10.1063/1.346573
Ohshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Atomic mixing phenomena and changes in faceted structure of Ge films grown on (100)Si by thermal annealing. Journal of Crystal Growth, 115 (1). 106-111 doi:10.1016/0022-0248(91)90721-g
Ohshima, N., Zaima, S., Koide, Y., 'Tomioka, S., Yasuda, Y. (1992) Initial growth of Ge films on Si(111)7 × 7 surfaces by gas source molecular beam epitaxy. Applied Surface Science, 60. 120-125 doi:10.1016/0169-4332(92)90404-l
Koide, Yasuo, Zaima, Shigeaki, Ohshima, Naoki, Yasuda, Yukio (1989) Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l690
Kasai, Yuji, Sakai, Shigeki (1991) In-situ growth of Bi-Sr-Ca-Cu oxide superconducting thin films by molecular beam epitaxy with a pure ozone source. Journal of Crystal Growth, 115 (1). 758-761 doi:10.1016/0022-0248(91)90840-2
Ohshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Formation of a superstructure in the initial stage of Ge epitaxial growth on Si(100) substrates. Applied Surface Science, 48. 69-75 doi:10.1016/0169-4332(91)90309-8
Teraguchi, Nobuaki, Konagai, Makoto, Kato, Fuji, Takahashi, Kiyoshi (1991) Growth and characterization of Ga2Se3 by molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 798-801 doi:10.1016/0022-0248(91)90848-y
 
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