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Ohshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Atomic mixing phenomena and changes in faceted structure of Ge films grown on (100)Si by thermal annealing. Journal of Crystal Growth, 115 (1). 106-111 doi:10.1016/0022-0248(91)90721-g

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Reference TypeJournal (article/letter/editorial)
TitleAtomic mixing phenomena and changes in faceted structure of Ge films grown on (100)Si by thermal annealing
JournalJournal of Crystal Growth
AuthorsOhshima, N.Author
Koide, Y.Author
Zaima, S.Author
Yasuda, Y.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90721-gSearch in ResearchGate
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Mindat Ref. ID2803678Long-form Identifiermindat:1:5:2803678:4
GUID0
Full ReferenceOhshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Atomic mixing phenomena and changes in faceted structure of Ge films grown on (100)Si by thermal annealing. Journal of Crystal Growth, 115 (1). 106-111 doi:10.1016/0022-0248(91)90721-g
Plain TextOhshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Atomic mixing phenomena and changes in faceted structure of Ge films grown on (100)Si by thermal annealing. Journal of Crystal Growth, 115 (1). 106-111 doi:10.1016/0022-0248(91)90721-g
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Koide, Y., Zaima, S., Ohshima, N., Yasuda, Y. (1990) Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy. Journal of Crystal Growth, 99 (1). 254-258 doi:10.1016/0022-0248(90)90522-m
Yasuda, Y., Itoh, K., Ohshima, N., Koide, Y., Zaima, S. (1993) RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy. Journal of Crystal Growth, 128 (1). 319-326 doi:10.1016/0022-0248(93)90341-s
Ohshima, N., Koide, Y., Zaima, S., Yasuda, Y. (1991) Formation of a superstructure in the initial stage of Ge epitaxial growth on Si(100) substrates. Applied Surface Science, 48. 69-75 doi:10.1016/0169-4332(91)90309-8
Ohshima, N., Zaima, S., Koide, Y., 'Tomioka, S., Yasuda, Y. (1992) Initial growth of Ge films on Si(111)7 × 7 surfaces by gas source molecular beam epitaxy. Applied Surface Science, 60. 120-125 doi:10.1016/0169-4332(92)90404-l
Koide, Y., Zaima, S., Itoh, K., Yasuda, Y. (1992) In-situ RHEED study on the effect of light irradiation on Ge/Si heteroepitaxial growth by GeH4 source MBE. Journal of Crystal Growth, 120 (1). 284-289 doi:10.1016/0022-0248(92)90404-7
Koide, Y., Furukawa, A., Zaima, S., Yasuda, Y. (1991) In-situ RHEED study of growth processes in the initial stage of SiGe alloy film deposition by gas source molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 365-370 doi:10.1016/0022-0248(91)90769-2
Koide, Y., Zaima, S., Itoh, K., Ohshima, N., Yasuda, Y. (1990) Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4source molecular beam epitaxy. Journal of Applied Physics, 68 (5). 2164-2167 doi:10.1063/1.346573
Yasuda, Y., Koide, Y., Furukawa, A., Ohshima, N., Zaima, S. (1993) Relationship between growth processes and strain relaxation in Si1−xGexfilms grown on (100)Si‐(2×1) surfaces by gas source molecular beam epitaxy. Journal of Applied Physics, 73 (5). 2288-2293 doi:10.1063/1.353134
Ohshima, N., Koide, Y., Itoh, K., Zaima, S., Yasuda, Y. (1990) Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growth. Applied Physics Letters, 57 (23). 2434-2436 doi:10.1063/1.103868
Okada, M, Muto, A, Ikeda, H, Zaima, S, Yasuda, Y (1998) Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy. Journal of Crystal Growth, 188 (1). 119-124 doi:10.1016/s0022-0248(98)00041-4
Zaima, Shigeaki, Yasuda, Yukio (1996) Studies on the suppression of Ge segregation during Si overgrowth on Ge(n ML)Si(100) substrates by gas-source MBE. Journal of Crystal Growth, 163 (1). 105-112 doi:10.1016/0022-0248(95)01042-4
 
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