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Teraguchi, Nobuaki, Konagai, Makoto, Kato, Fuji, Takahashi, Kiyoshi (1991) Growth and characterization of Ga2Se3 by molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 798-801 doi:10.1016/0022-0248(91)90848-y

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and characterization of Ga2Se3 by molecular beam epitaxy
JournalJournal of Crystal Growth
AuthorsTeraguchi, NobuakiAuthor
Konagai, MakotoAuthor
Kato, FujiAuthor
Takahashi, KiyoshiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90848-ySearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2804435Long-form Identifiermindat:1:5:2804435:8
GUID0
Full ReferenceTeraguchi, Nobuaki, Konagai, Makoto, Kato, Fuji, Takahashi, Kiyoshi (1991) Growth and characterization of Ga2Se3 by molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 798-801 doi:10.1016/0022-0248(91)90848-y
Plain TextTeraguchi, Nobuaki, Konagai, Makoto, Kato, Fuji, Takahashi, Kiyoshi (1991) Growth and characterization of Ga2Se3 by molecular beam epitaxy. Journal of Crystal Growth, 115 (1). 798-801 doi:10.1016/0022-0248(91)90848-y
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Teraguchi, Nobuaki, Kato, Fuji, Konagai, Makoto, Takahashi, Kiyoshi (1989) Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2134
Teraguchi, Nobuaki, Kato, Fuji, Konagai, Makoto, Takahashi, Kiyoshi, Nakamura, Yoshio, Otsuka, Nobuo (1991) Vacancy ordering of Ga2Se3films by molecular beam epitaxy. Applied Physics Letters, 59 (5). 567-569 doi:10.1063/1.105388
Teraguchi, Nobuaki, Takemura, Yasushi, Kimura, Ryuhei, Konagai, Makoto, Takahashi, Kiyoshi (1988) Wide bandgap II–VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 93 (1). 720-725 doi:10.1016/0022-0248(88)90610-0
Taike, Akira, Teraguchi, Nobuaki, Konagai, Makoto, Takahashi, Kiyoshi (1987) Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l989
Kimura, Ryuhei, Konagai, Makoto, Takahashi, Kiyoshi (1992) Atomic layer epitaxy of ZnSe on GaAs(100) by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 116 (3). 283-288 doi:10.1016/0022-0248(92)90634-u
Okamoto, Tamotsu, Yamada, Akira, Konagai, Makoto, Takahashi, Kiyoshi (1994) Polarized photoluminescence in vacancy-ordered Ga2Se3. Journal of Crystal Growth, 138 (1). 204-207 doi:10.1016/0022-0248(94)90807-9
Kojima, Nobuaki, Sato, Kei, Budiman, Maman, Yamada, Akira, Konagai, Makoto, Takahashi, Kiyoshi, Nakamura, Yoshio, Nittono, Osamu (1995) Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAs. Journal of Crystal Growth, 150. 1175-1179 doi:10.1016/0022-0248(95)80124-u
Konagai, Makoto, Yamada, Takumi, Akatsuka, Takeshi, Saito, Koki, Tokumitsu, Eisuke, Takahashi, Kiyoshi (1989) Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 98 (1). 167-173 doi:10.1016/0022-0248(89)90196-6
Yamada, Takumi, Nozaki, Shinji, Miyake, Ryuji, Fukamachi, Taichi, Shirakashi, Jun-ichi, Konagai, Makoto, Takahashi, Kiyoshi (1991) MOMBE growth and characterization of heavily carbon-doped InGaAs. Journal of Crystal Growth, 111 (1). 584-588 doi:10.1016/0022-0248(91)91044-b
Takemura, Yasushi, Nakanishi, Hideki, Konagai, Makoto, Takahashi, Kiyoshi, Nakamura, Yoshio, Otsuka, Nobuo (1991) (ZnSe)m-(ZnTe)n short-period strained layer superlattices prepared by atomic layer epitaxy. Journal of Crystal Growth, 111 (1). 802-806 doi:10.1016/0022-0248(91)91085-o
Takemura, Yasushi, Konagai, Makoto, Nakanishi, Hideki, Takahashi, Kiyoshi (1992) Self-limiting growth with 0.5 monolayer per cycle in atomic layer epitaxy of ZnTe. Journal of Crystal Growth, 117 (1). 144-147 doi:10.1016/0022-0248(92)90733-y
 
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