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Brandt, O., Ploog, K., Tapfer, L., Hohenstein, M., Phillipp, F. (1991) Synthesis and structural configuration of highly strained InAs films in GaAs. Journal of Crystal Growth, 115 (1). 99-105 doi:10.1016/0022-0248(91)90720-p

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Reference TypeJournal (article/letter/editorial)
TitleSynthesis and structural configuration of highly strained InAs films in GaAs
JournalJournal of Crystal Growth
AuthorsBrandt, O.Author
Ploog, K.Author
Tapfer, L.Author
Hohenstein, M.Author
Phillipp, F.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90720-pSearch in ResearchGate
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Mindat Ref. ID2803672Long-form Identifiermindat:1:5:2803672:0
GUID0
Full ReferenceBrandt, O., Ploog, K., Tapfer, L., Hohenstein, M., Phillipp, F. (1991) Synthesis and structural configuration of highly strained InAs films in GaAs. Journal of Crystal Growth, 115 (1). 99-105 doi:10.1016/0022-0248(91)90720-p
Plain TextBrandt, O., Ploog, K., Tapfer, L., Hohenstein, M., Phillipp, F. (1991) Synthesis and structural configuration of highly strained InAs films in GaAs. Journal of Crystal Growth, 115 (1). 99-105 doi:10.1016/0022-0248(91)90720-p
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Brandt, O., Tapfer, L., Ploog, K., Hohenstein, M., Phillipp, F. (1991) Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures. Journal of Crystal Growth, 111 (1). 383-387 doi:10.1016/0022-0248(91)91005-u
Brandt, O., Tapfer, L., Ploog, K., Bierwolf, R., Hohenstein, M. (1993) Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs. Journal of Crystal Growth, 127 (1). 513-514 doi:10.1016/0022-0248(93)90672-j
Brandt, O., Tapfer, L., Ploog, K., Bierwolf, R., Hohenstein, M., Phillipp, F., Lage, H., Heberle, A. (1991) InAs quantum dots in a single-crystal GaAs matrix. Physical Review B, 44 (15) 8043-8053 doi:10.1103/physrevb.44.8043
Brandt, O., Ploog, K., Tapfer, L., Hohenstein, M., Bierwolf, R., Phillipp, F. (1992) Formation and morphology of InAs/GaAs heterointerfaces. Physical Review B, 45 (15) 8443-8453 doi:10.1103/physrevb.45.8443
Brandt, O., Tapfer, L., Ploog, K., Bierwolf, R., Phillipp, F., Hohenstein, M. (1992) Direct synthesis of InAs quantum dots in single-crystalline GaAs matrix by molecular beam epitaxy. Surface Science, 267 (1). 204-208 doi:10.1016/0039-6028(92)91121-q
Brandt, O., Tapfer, L., Cingolani, R., Ploog, K., Hohenstein, M., Phillipp, F. (1990) Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy. Physical Review B, 41 (18) 12599-12606 doi:10.1103/physrevb.41.12599
Brandt, O., Tapfer, L., Ploog, K., Bierwolf, R., Hohenstein, M. (1992) Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs. Applied Physics Letters, 61 (23). 2814-2816 doi:10.1063/1.108046
Giannini, C., Brandt, O., Fischer, A., Ploog, K.H., Tapfer, L. (1993) Structural and electronic properties of GaAs : C and AlxGa1-xAs : C grown by solid-source molecular beam epitaxy. Journal of Crystal Growth, 127 (1). 724-727 doi:10.1016/0022-0248(93)90720-h
Tournié, E., Brandt, O., Giannini, C., Ploog, K.H., Hohenstein, M. (1993) Virtual-surfactant epitaxy of InAs quantum wells. Journal of Crystal Growth, 127 (1). 765-769 doi:10.1016/0022-0248(93)90728-f
Crook, G.E., Tapfer, L., Däweritz, L., Cingolani, R., Ploog, K. (1991) Control of initial surface configuration for GaAs-on-Si MBE using a Si buffer layer?. Journal of Crystal Growth, 111 (1). 184-188 doi:10.1016/0022-0248(91)90968-b
Ploog, K., Fischer, A., Tapfer, L., Feuerbacher, B.F. (1991) Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers. Journal of Crystal Growth, 111 (1). 344-347 doi:10.1016/0022-0248(91)90998-k
 
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