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Ploog, K., Fischer, A., Tapfer, L., Feuerbacher, B.F. (1991) Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers. Journal of Crystal Growth, 111 (1). 344-347 doi:10.1016/0022-0248(91)90998-k

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Reference TypeJournal (article/letter/editorial)
TitleNarrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers
JournalJournal of Crystal Growth
AuthorsPloog, K.Author
Fischer, A.Author
Tapfer, L.Author
Feuerbacher, B.F.Author
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90998-kSearch in ResearchGate
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Mindat Ref. ID2800928Long-form Identifiermindat:1:5:2800928:5
GUID0
Full ReferencePloog, K., Fischer, A., Tapfer, L., Feuerbacher, B.F. (1991) Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers. Journal of Crystal Growth, 111 (1). 344-347 doi:10.1016/0022-0248(91)90998-k
Plain TextPloog, K., Fischer, A., Tapfer, L., Feuerbacher, B.F. (1991) Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers. Journal of Crystal Growth, 111 (1). 344-347 doi:10.1016/0022-0248(91)90998-k
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

See Also

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Brandt, O., Tapfer, L., Ploog, K., Hohenstein, M., Phillipp, F. (1991) Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures. Journal of Crystal Growth, 111 (1). 383-387 doi:10.1016/0022-0248(91)91005-u
Crook, G.E., Tapfer, L., Däweritz, L., Cingolani, R., Ploog, K. (1991) Control of initial surface configuration for GaAs-on-Si MBE using a Si buffer layer?. Journal of Crystal Growth, 111 (1). 184-188 doi:10.1016/0022-0248(91)90968-b
Brandt, O., Ploog, K., Tapfer, L., Hohenstein, M., Phillipp, F. (1991) Synthesis and structural configuration of highly strained InAs films in GaAs. Journal of Crystal Growth, 115 (1). 99-105 doi:10.1016/0022-0248(91)90720-p
Noda, T., Tanaka, M., Sakaki, H. (1991) Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement. Journal of Crystal Growth, 111 (1). 348-352 doi:10.1016/0022-0248(91)90999-l
Woodbridge, K., Moore, K.J., Andrew, N.L., Fewster, P.F. (1991) Indium incorporation in GaInAs/GaAs quantum wells grown on GaAs. Journal of Crystal Growth, 111 (1). 339-343 doi:10.1016/0022-0248(91)90997-j
Ruiz, A., Giannini, C., Tapfer, L., Ploog, K., Alonso, M.I., Armelles, G., Garriga, M., Castrillo, P. (1993) Growth and characterization of A1As/GaInAs multiple quantum wells. Journal of Crystal Growth, 127 (1). 611-615 doi:10.1016/0022-0248(93)90694-r
de Miguel, J. L., Fujiwara, K., Tapfer, L., Ploog, K. (1985) Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 47 (8). 836-838 doi:10.1063/1.96001
Shank, S.M., Wicks, G.W. (1991) Electrooptic effects of piezo-electrically strained AlGaAs/GaAs(111) quantum wells. Journal of Crystal Growth, 111 (1). 440-444 doi:10.1016/0022-0248(91)91016-4
Zhang, Y.H., Tapfer, L., Lu, G.H., Ploog, K. (1993) Structural properties of GaxIn1−xAs⧸AlyIn1−y As multiple layers. Journal of Crystal Growth, 127 (1). 816-820 doi:10.1016/0022-0248(93)90739-j
Schneider, H., Wagner, J., Ploog, K., Fischer, A., Fujiwara, K. (1993) Photocurrent and Raman spectroscopy of Stark ladder superlattices with single monolayer AlAs barriers. Journal of Crystal Growth, 127 (1). 836-840 doi:10.1016/0022-0248(93)90743-g
Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N. (1991) Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 114 (3). 337-345 doi:10.1016/0022-0248(91)90050-f
 
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