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Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N. (1991) Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 114 (3). 337-345 doi:10.1016/0022-0248(91)90050-f

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Reference TypeJournal (article/letter/editorial)
TitleNarrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy
JournalJournal of Crystal Growth
AuthorsShiralagi, K.T.Author
Puechner, R.A.Author
Choi, K.Y.Author
Droopad, R.Author
Maracas, G.N.Author
Year1991 (November)Volume114
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90050-fSearch in ResearchGate
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Mindat Ref. ID2803281Long-form Identifiermindat:1:5:2803281:2
GUID0
Full ReferenceShiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N. (1991) Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 114 (3). 337-345 doi:10.1016/0022-0248(91)90050-f
Plain TextShiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N. (1991) Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 114 (3). 337-345 doi:10.1016/0022-0248(91)90050-f
In(1991, November) Journal of Crystal Growth Vol. 114 (3) Elsevier BV

See Also

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Droopad, R., Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Maracas, G.N. (1992) Low temperature GaAs grown by gas source molecular beam epitaxy. Journal of Crystal Growth, 120 (1). 200-205 doi:10.1016/0022-0248(92)90391-u
Droopad, R., Puechner, R.A., Choi, K.Y., Shiralagi, K.T., Maracas, G.N. (1991) Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures. Journal of Crystal Growth, 114 (3). 327-336 doi:10.1016/0022-0248(91)90049-b
Puechner, R.A., Johnson, D.A., Shiralagi, K.T., Gerber, D.S., Droopad, R., Maracas, G.N. (1991) Electrical and optical characterization of gas source and solid source MBE low temperature buffers. Journal of Crystal Growth, 111 (1). 43-49 doi:10.1016/0022-0248(91)90944-z
Shiralagi, K. T., Puechner, R. A., Choi, K. Y., Droopad, R., Maracas, G. N. (1991) Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers. Journal of Applied Physics, 69 (11). 7942-7944 doi:10.1063/1.348908
Edwards, J.L., Maracas, G.N., Shiralagi, K.T., Choi, K.Y., Droopad, R. (1992) In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry. Journal of Crystal Growth, 120 (1). 78-83 doi:10.1016/0022-0248(92)90367-r
Droopad, R., Choi, K. Y., Puechner, R. A., Shiralagi, K. T., Gerber, D. S., Maracas, G. N. (1991) Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells. Applied Physics Letters, 59 (18). 2308-2310 doi:10.1063/1.106052
Droopad, R., Puechner, R. A., Shiralagi, K. T., Choi, K. Y., Maracas, G. N. (1991) Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces. Applied Physics Letters, 58 (16). 1777-1779 doi:10.1063/1.105088
Hou, H.Q., Tu, C.W. (1992) InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy. Journal of Crystal Growth, 120 (1). 167-171 doi:10.1016/0022-0248(92)90384-u
Yoon, S.F., Li, H.M., Radhakrishnan, K., Zhang, D.H. (1993) The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 131 (1). 1-4 doi:10.1016/0022-0248(93)90389-e
Panish, M.B., Hamm, R.A., Ritter, D., Luftman, H.S., Cotell, C.M. (1991) Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy. Journal of Crystal Growth, 112 (2). 343-353 doi:10.1016/0022-0248(91)90309-s
Bi, W.G., Tu, C.W. (1996) Highly strained quantum wells grown on GaP and on an buffer layer by gas-source molecular beam epitaxy. Journal of Crystal Growth, 165 (3). 210-214 doi:10.1016/0022-0248(96)00185-6
 
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