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Tournié, E., Brandt, O., Giannini, C., Ploog, K.H., Hohenstein, M. (1993) Virtual-surfactant epitaxy of InAs quantum wells. Journal of Crystal Growth, 127 (1). 765-769 doi:10.1016/0022-0248(93)90728-f

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Reference TypeJournal (article/letter/editorial)
TitleVirtual-surfactant epitaxy of InAs quantum wells
JournalJournal of Crystal Growth
AuthorsTournié, E.Author
Brandt, O.Author
Giannini, C.Author
Ploog, K.H.Author
Hohenstein, M.Author
Year1993 (February)Volume127
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(93)90728-fSearch in ResearchGate
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Mindat Ref. ID2810985Long-form Identifiermindat:1:5:2810985:9
GUID0
Full ReferenceTournié, E., Brandt, O., Giannini, C., Ploog, K.H., Hohenstein, M. (1993) Virtual-surfactant epitaxy of InAs quantum wells. Journal of Crystal Growth, 127 (1). 765-769 doi:10.1016/0022-0248(93)90728-f
Plain TextTournié, E., Brandt, O., Giannini, C., Ploog, K.H., Hohenstein, M. (1993) Virtual-surfactant epitaxy of InAs quantum wells. Journal of Crystal Growth, 127 (1). 765-769 doi:10.1016/0022-0248(93)90728-f
In(1993, February) Journal of Crystal Growth Vol. 127 (1) Elsevier BV

See Also

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Giannini, C., Brandt, O., Fischer, A., Ploog, K.H., Tapfer, L. (1993) Structural and electronic properties of GaAs : C and AlxGa1-xAs : C grown by solid-source molecular beam epitaxy. Journal of Crystal Growth, 127 (1). 724-727 doi:10.1016/0022-0248(93)90720-h
Brandt, O., Tapfer, L., Ploog, K., Bierwolf, R., Hohenstein, M. (1993) Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs. Journal of Crystal Growth, 127 (1). 513-514 doi:10.1016/0022-0248(93)90672-j
Tournié, Eric, Ploog, Klaus H. (1993) Virtual‐surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wells. Applied Physics Letters, 62 (8). 858-860 doi:10.1063/1.108546
Brandt, O., Tapfer, L., Ploog, K., Hohenstein, M., Phillipp, F. (1991) Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures. Journal of Crystal Growth, 111 (1). 383-387 doi:10.1016/0022-0248(91)91005-u
Ruiz, A., Giannini, C., Tapfer, L., Ploog, K., Alonso, M.I., Armelles, G., Garriga, M., Castrillo, P. (1993) Growth and characterization of A1As/GaInAs multiple quantum wells. Journal of Crystal Growth, 127 (1). 611-615 doi:10.1016/0022-0248(93)90694-r
Behrend, J., Wassermeier, M., Ploog, K.H. (1996) Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy. Journal of Crystal Growth, 167 (3). 440-445 doi:10.1016/0022-0248(96)00273-4
Ilg, Matthias, Brandt, Oliver, Nötzel, Richard, Ploog, Klaus (1993) Growth of [211]-oriented InAs/GaAs heterostructures. Journal of Crystal Growth, 127 (1). 927-931 doi:10.1016/0022-0248(93)90762-l
Brandt, O., Tournié, E., Tapfer, L., Ploog, K. (1993) Determination of the Sb composition profile in MBE-grown GaSb/GaAs structures by high-resolution X-ray diffractometry. Journal of Crystal Growth, 127 (1). 503-507 doi:10.1016/0022-0248(93)90670-r
Tournié, Eric, Brandt, Oliver, Ploog, Klaus (1992) Photoluminescence of virtual‐surfactant grown InAs/Al0.48In0.52As single quantum wells. Applied Physics Letters, 60 (23). 2877-2879 doi:10.1063/1.106805
Brandt, O., Ploog, K., Tapfer, L., Hohenstein, M., Phillipp, F. (1991) Synthesis and structural configuration of highly strained InAs films in GaAs. Journal of Crystal Growth, 115 (1). 99-105 doi:10.1016/0022-0248(91)90720-p
Tournié, E., Grandjean, N., Trampert, A., Massies, J., Ploog, K.H. (1995) Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures. Journal of Crystal Growth, 150. 460-466 doi:10.1016/0022-0248(95)80254-a
 
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