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Ryu, Hojeong, Kim, Sungjun (2021) Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. Metals, 11 (4) 653pp. doi:10.3390/met11040653

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Reference TypeJournal (article/letter/editorial)
TitleIrregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode
JournalMetals
AuthorsRyu, HojeongAuthor
Kim, SungjunAuthor
Year2021 (April 17)Volume11
Issue4
PublisherMDPI AG
DOIdoi:10.3390/met11040653Search in ResearchGate
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Mindat Ref. ID13627727Long-form Identifiermindat:1:5:13627727:1
GUID0
Full ReferenceRyu, Hojeong, Kim, Sungjun (2021) Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. Metals, 11 (4) 653pp. doi:10.3390/met11040653
Plain TextRyu, Hojeong, Kim, Sungjun (2021) Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. Metals, 11 (4) 653pp. doi:10.3390/met11040653
In(2021, April) Metals Vol. 11 (4) MDPI AG

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Ryu, Hojeong, Kim, Sungjun (2021) Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM. Metals, 11 (9) 1350pp. doi:10.3390/met11091350
Ryu, Hojeong, Kim, Sungjun (2021) Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device. Metals, 11 (8) 1207pp. doi:10.3390/met11081207
Ryu, Hojeong, Park, Beomjun, Kim, Sungjun (2021) Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device. Metals, 11 (10) 1531pp. doi:10.3390/met11101531
Ryu, Hojeong, Jung, Hoeje, Lee, Kisong, Kim, Sungjun (2021) Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals, 11 (12) 1885pp. doi:10.3390/met11121885
Ryu, Hojeong, Choi, Junhyeok, Kim, Sungjun (2020) Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM. Metals, 10 (11) 1410pp. doi:10.3390/met10111410
Ryu, Hojeong, Kim, Sungjun (2021) Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device. Metals, 11 (3) 440pp. doi:10.3390/met11030440
Kim, Dahye, Shin, Jiwoong, Kim, Sungjun (2021) Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate. Metals, 11 (10) 1572pp. doi:10.3390/met11101572
Kim, Seunghyun, Kwon, Osung, Ryu, Hojeong, Kim, Sungjun (2021) Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process. Metals, 11 (5) 772pp. doi:10.3390/met11050772
Ryu, Hojeong, Kim, Sungjun (2021) Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device. Metals, 11 (8) 1199pp. doi:10.3390/met11081199
Yang, Jinwoong, Ryu, Hojeong, Kim, Sungjun (2021) Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device. Chaos, Solitons & Fractals, 145. 110783pp. doi:10.1016/j.chaos.2021.110783
Pyo, Juyeong, Woo, Seung-Jin, Lee, Kisong, Kim, Sungjun (2021) Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device. Metals, 11 (10) 1605pp. doi:10.3390/met11101605
 
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