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Kim, Dahye, Shin, Jiwoong, Kim, Sungjun (2021) Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate. Metals, 11 (10) 1572pp. doi:10.3390/met11101572

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Reference TypeJournal (article/letter/editorial)
TitleResistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate
JournalMetals
AuthorsKim, DahyeAuthor
Shin, JiwoongAuthor
Kim, SungjunAuthor
Year2021 (October 1)Volume11
Issue10
PublisherMDPI AG
DOIdoi:10.3390/met11101572Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID13626802Long-form Identifiermindat:1:5:13626802:6
GUID0
Full ReferenceKim, Dahye, Shin, Jiwoong, Kim, Sungjun (2021) Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate. Metals, 11 (10) 1572pp. doi:10.3390/met11101572
Plain TextKim, Dahye, Shin, Jiwoong, Kim, Sungjun (2021) Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate. Metals, 11 (10) 1572pp. doi:10.3390/met11101572
In(2021, October) Metals Vol. 11 (10) MDPI AG

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Ryu, Hojeong, Kim, Sungjun (2021) Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM. Metals, 11 (9) 1350pp. doi:10.3390/met11091350
Ryu, Hojeong, Choi, Junhyeok, Kim, Sungjun (2020) Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM. Metals, 10 (11) 1410pp. doi:10.3390/met10111410
Lee, Yewon, Shin, Jiwoong, Nam, Giyeong, Chung, Daewon, Kim, Sungjoon, Jeon, Joonhyeon, Kim, Sungjun (2022) Atomic Layer Deposited SiOX-Based Resistive Switching Memory for Multi-Level Cell Storage. Metals, 12 (8) 1370 doi:10.3390/met12081370
Ryu, Hojeong, Kim, Sungjun (2021) Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. Metals, 11 (4) 653pp. doi:10.3390/met11040653
Ryu, Hojeong, Kim, Sungjun (2021) Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device. Metals, 11 (8) 1207pp. doi:10.3390/met11081207
Kim, Dahye, Shin, Jiwoong, Kim, Sungjun (2022) Implementation of reservoir computing using volatile WO -based memristor. Applied Surface Science, 599. 153876 doi:10.1016/j.apsusc.2022.153876
Ryu, Hojeong, Park, Beomjun, Kim, Sungjun (2021) Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device. Metals, 11 (10) 1531pp. doi:10.3390/met11101531
Pyo, Juyeong, Woo, Seung-Jin, Lee, Kisong, Kim, Sungjun (2021) Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device. Metals, 11 (10) 1605pp. doi:10.3390/met11101605
Ryu, Hojeong, Jung, Hoeje, Lee, Kisong, Kim, Sungjun (2021) Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals, 11 (12) 1885pp. doi:10.3390/met11121885
Yang, Seyeong, Park, Jongmin, Cho, Youngboo, Lee, Yunseok, Kim, Sungjun (2022) Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. International Journal of Molecular Sciences, 23 (21) 13249 doi:10.3390/ijms232113249
Kim, Seunghyun, Kwon, Osung, Ryu, Hojeong, Kim, Sungjun (2021) Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process. Metals, 11 (5) 772pp. doi:10.3390/met11050772
 
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