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Ryu, Hojeong, Jung, Hoeje, Lee, Kisong, Kim, Sungjun (2021) Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals, 11 (12) 1885pp. doi:10.3390/met11121885

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Reference TypeJournal (article/letter/editorial)
TitleMulti-Level Resistive Switching of Pt/HfO2/TaN Memory Device
JournalMetals
AuthorsRyu, HojeongAuthor
Jung, HoejeAuthor
Lee, KisongAuthor
Kim, SungjunAuthor
Year2021 (November 23)Volume11
Issue12
PublisherMDPI AG
DOIdoi:10.3390/met11121885Search in ResearchGate
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Mindat Ref. ID13626488Long-form Identifiermindat:1:5:13626488:2
GUID0
Full ReferenceRyu, Hojeong, Jung, Hoeje, Lee, Kisong, Kim, Sungjun (2021) Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals, 11 (12) 1885pp. doi:10.3390/met11121885
Plain TextRyu, Hojeong, Jung, Hoeje, Lee, Kisong, Kim, Sungjun (2021) Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals, 11 (12) 1885pp. doi:10.3390/met11121885
In(2021, December) Metals Vol. 11 (12) MDPI AG

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Ryu, Hojeong, Kim, Sungjun (2021) Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device. Metals, 11 (8) 1207pp. doi:10.3390/met11081207
Pyo, Juyeong, Woo, Seung-Jin, Lee, Kisong, Kim, Sungjun (2021) Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device. Metals, 11 (10) 1605pp. doi:10.3390/met11101605
Ryu, Hojeong, Kim, Sungjun (2021) Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM. Metals, 11 (9) 1350pp. doi:10.3390/met11091350
Ryu, Hojeong, Park, Beomjun, Kim, Sungjun (2021) Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device. Metals, 11 (10) 1531pp. doi:10.3390/met11101531
Park, Jongmin, Lee, Seungwook, Lee, Kisong, Kim, Sungjun (2021) Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell. Metals, 11 (12) 1918pp. doi:10.3390/met11121918
Ryu, Hojeong, Kim, Sungjun (2021) Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. Metals, 11 (4) 653pp. doi:10.3390/met11040653
Ryu, Hojeong, Kim, Sungjun (2021) Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device. Metals, 11 (3) 440pp. doi:10.3390/met11030440
Ryu, Hojeong, Kim, Sungjun (2021) Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device. Metals, 11 (8) 1199pp. doi:10.3390/met11081199
Ryu, Hojeong, Choi, Junhyeok, Kim, Sungjun (2020) Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM. Metals, 10 (11) 1410pp. doi:10.3390/met10111410
Lee, Yewon, Shin, Jiwoong, Nam, Giyeong, Chung, Daewon, Kim, Sungjoon, Jeon, Joonhyeon, Kim, Sungjun (2022) Atomic Layer Deposited SiOX-Based Resistive Switching Memory for Multi-Level Cell Storage. Metals, 12 (8) 1370 doi:10.3390/met12081370
Yang, Jinwoong, Ryu, Hojeong, Kim, Sungjun (2021) Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device. Chaos, Solitons & Fractals, 145. 110783pp. doi:10.1016/j.chaos.2021.110783
 
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