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Niihara, Koichi, Hirai, Toshio (1977) Chemical vapour-deposited silicon nitride. Journal of Materials Science, 12. 1233-1242 doi:10.1007/bf02426862

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Reference TypeJournal (article/letter/editorial)
TitleChemical vapour-deposited silicon nitride
JournalJournal of Materials Science
AuthorsNiihara, KoichiAuthor
Hirai, ToshioAuthor
Year1977 (June)Volume12
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf02426862Search in ResearchGate
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Mindat Ref. ID9983271Long-form Identifiermindat:1:5:9983271:7
GUID0
Full ReferenceNiihara, Koichi, Hirai, Toshio (1977) Chemical vapour-deposited silicon nitride. Journal of Materials Science, 12. 1233-1242 doi:10.1007/bf02426862
Plain TextNiihara, Koichi, Hirai, Toshio (1977) Chemical vapour-deposited silicon nitride. Journal of Materials Science, 12. 1233-1242 doi:10.1007/bf02426862
In(n.d.) Journal of Materials Science Vol. 12. Springer Science and Business Media LLC

See Also

These are possibly similar items as determined by title/reference text matching only.

Niihara, Koichi, Hirai, Toshio (1977) Chemical vapour-deposited silicon nitride. Journal of Materials Science, 12. 1243-1252 doi:10.1007/bf02426863
Niihara, Koichi, Hirai, Toshio (1976) Chemical vapour-deposited silicon nitride. Journal of Materials Science, 11. 593-603 doi:10.1007/bf01209443
Niihara, Koichi, Hirai, Toshio (1976) Chemical vapour-deposited silicon nitride. Journal of Materials Science, 11. 604-611 doi:10.1007/bf01209444
Hirai, Toshio, Niihara, Koichi, Goto, Takashi (1977) Rapid chemical vapour-deposition of Si3N4. Journal of Materials Science, 12. 631-632 doi:10.1007/bf00540292
Niihara, Koichi, Hirai, Toshio (1978) Fractography of chemical vapour-deposited Si3 N4. Journal of Materials Science, 13. 2385-2393 doi:10.1007/bf00808053
Niihara, Koichi, Hirai, Toshio (1978) Hardness anisotropy of ?-Si3N4 single crystal. Journal of Materials Science, 13. 2276-2278 doi:10.1007/bf00541688
Matsuda, Toshitsugu, Uno, Naoki, Nakae, Hiroyuki, Hirai, Toshio (1986) Synthesis and structure of chemically vapour-deposited boron nitride. Journal of Materials Science, 21. 649-658 doi:10.1007/bf01145537
Niihara, Koichi, Hirai, Toshio (1979) Growth, morphology and slip system of ?-Si3N4 single crystal. Journal of Materials Science, 14. 1952-1960 doi:10.1007/bf00551037
Hirai, Toshio, Niihara, Koichi, Ohkubo, Akira (1977) High-temperature Reactions of α- and β-Silicon Nitrides with Carbon. Journal of the Japan Institute of Metals, 41 (4). 367-374 doi:10.2320/jinstmet1952.41.4_367
Goto, Takashi, Hirai, Toshio (1989) Dielectric properties of chemically vapour-deposited Si3N4. Journal of Materials Science, 24. 821-826 doi:10.1007/bf01148763
Hayashi, Shinsuke, Hirai, Toshio (1983) Thermal conductivity of chemically vapour-deposited Si3N4-TiN composites. Journal of Materials Science, 18. 3259-3264 doi:10.1007/bf00544150
 
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