| Reference Type | Journal (article/letter/editorial) |
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| Title | Rapid chemical vapour-deposition of Si3N4 |
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| Journal | Journal of Materials Science |
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| Authors | Hirai, Toshio | Author |
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| Niihara, Koichi | Author |
| Goto, Takashi | Author |
| Year | 1977 (March) | Volume | 12 |
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| Publisher | Springer Science and Business Media LLC |
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| DOI | doi:10.1007/bf00540292Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 9983177 | Long-form Identifier | mindat:1:5:9983177:2 |
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| GUID | 0 |
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| Full Reference | Hirai, Toshio, Niihara, Koichi, Goto, Takashi (1977) Rapid chemical vapour-deposition of Si3N4. Journal of Materials Science, 12. 631-632 doi:10.1007/bf00540292 |
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| Plain Text | Hirai, Toshio, Niihara, Koichi, Goto, Takashi (1977) Rapid chemical vapour-deposition of Si3N4. Journal of Materials Science, 12. 631-632 doi:10.1007/bf00540292 |
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| In | (n.d.) Journal of Materials Science Vol. 12. Springer Science and Business Media LLC |
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