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Kartavykh, A.V., Ginkin, V.P. (2010) Melt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity. Materials Science Forum, 649. 29-34 doi:10.4028/www.scientific.net/msf.649.29

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Reference TypeJournal (article/letter/editorial)
TitleMelt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity
JournalMaterials Science Forum
AuthorsKartavykh, A.V.Author
Ginkin, V.P.Author
Year2010 (May)Volume649
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.649.29Search in ResearchGate
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Mindat Ref. ID9870693Long-form Identifiermindat:1:5:9870693:8
GUID0
Full ReferenceKartavykh, A.V., Ginkin, V.P. (2010) Melt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity. Materials Science Forum, 649. 29-34 doi:10.4028/www.scientific.net/msf.649.29
Plain TextKartavykh, A.V., Ginkin, V.P. (2010) Melt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity. Materials Science Forum, 649. 29-34 doi:10.4028/www.scientific.net/msf.649.29
In(2010) Materials Science Forum Vol. 649. Trans Tech Publications, Ltd.

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Ginkin, Vladimir, Kartavykh, Andrey, Zabudko, Mikhail (2004) A melt clusterization within the interfacial boundary layer and its hydrodynamics modelling at the microgravity semiconductor single crystal growth. Journal of Crystal Growth, 270 (3). 329-339 doi:10.1016/j.jcrysgro.2004.06.047
Artemyev, V.K., Folomeev, V.I., Ginkin, V.P., Kartavykh, A.V., Mil’vidskii, M.G., Rakov, V.V. (2001) The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals. Journal of Crystal Growth, 223 (1). 29-37 doi:10.1016/s0022-0248(00)00981-7
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Kartavykh, A.V., Ganina, S., Grothe, Dieter, Lemoisson, Fabienne, Herfs, W. (2010) Numerical Simulation of TiAl-Nb Alloy Solidification Experiment in TEM 01-3M Facility Aboard MAXUS 8. Materials Science Forum, 649. 223-228 doi:10.4028/www.scientific.net/msf.649.223
Benz, K.W., Cröll, A. (1998) Melt Growth of Semiconductor Crystals in Microgravity Conditions. Materials Science Forum, 276. 109-118 doi:10.4028/www.scientific.net/msf.276-277.109
Ginkin, V.P., Folomeev, V.I., Lukhanova, T.M., Rakov, V.V., Maronchuk, I.I., Kartavykh, A.V., Egorov, A.V. (2002) Method research and developing a method to control directed semiconductor crystallization in space. Journal of Crystal Growth, 236 (4). 551-556 doi:10.1016/s0022-0248(02)00865-5
Lin, Lan Ying, Da, Dao An (1991) Preparation and Properties of GaAs Single Crystal Grown from Melt under Microgravity Conditions. Materials Science Forum, 50. 183-195 doi:10.4028/www.scientific.net/msf.50.183
Golubov, S.I., Ginkin, V.P., Strokova, A.M. (1992) Dislocation Motion Influence on Bias Factor in Binary Alloys under Irradiation. Materials Science Forum, 97. 97-104 doi:10.4028/www.scientific.net/msf.97-99.97
Izumi, T., Morita, H., Fujiwara, T., Fujiwara, H., Inami, S. (1995) Impurity Behavior during Si Single Crystal Growth from the Melt. Materials Science Forum, 196. 109-114 doi:10.4028/www.scientific.net/msf.196-201.109
(2010) Materials Science Forum, 649. Trans Tech Publications, Ltd. doi:10.4028/www.scientific.net/msf.649
Shcherbina-Samoilova, M.B. (1991) Peculiarities of the Crystal Growth from the Vapour-Gas Phase in Microgravity. Materials Science Forum, 77. 85-92 doi:10.4028/www.scientific.net/msf.77.85
 
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