| Reference Type | Journal (article/letter/editorial) |
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| Title | The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals |
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| Journal | Journal of Crystal Growth |
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| Authors | Artemyev, V.K. | Author |
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| Folomeev, V.I. | Author |
| Ginkin, V.P. | Author |
| Kartavykh, A.V. | Author |
| Mil’vidskii, M.G. | Author |
| Rakov, V.V. | Author |
| Year | 2001 (February) | Volume | 223 |
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| Issue | 1 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/s0022-0248(00)00981-7Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 2858192 | Long-form Identifier | mindat:1:5:2858192:9 |
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| GUID | 0 |
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| Full Reference | Artemyev, V.K., Folomeev, V.I., Ginkin, V.P., Kartavykh, A.V., Mil’vidskii, M.G., Rakov, V.V. (2001) The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals. Journal of Crystal Growth, 223 (1). 29-37 doi:10.1016/s0022-0248(00)00981-7 |
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| Plain Text | Artemyev, V.K., Folomeev, V.I., Ginkin, V.P., Kartavykh, A.V., Mil’vidskii, M.G., Rakov, V.V. (2001) The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals. Journal of Crystal Growth, 223 (1). 29-37 doi:10.1016/s0022-0248(00)00981-7 |
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| In | (2001, February) Journal of Crystal Growth Vol. 223 (1) Elsevier BV |
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