| Reference Type | Journal (article/letter/editorial) |
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| Title | Oxygen defect in silicon studied by semi-empirical calculations |
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| Journal | Computational Materials Science |
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| Authors | Ballo, P. | Author |
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| Harmatha, L. | Author |
| Donoval, D. | Author |
| Year | 2008 (April) | Volume | 42 |
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| Issue | 2 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/j.commatsci.2007.05.017Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 9504891 | Long-form Identifier | mindat:1:5:9504891:2 |
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|
| GUID | 0 |
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| Full Reference | Ballo, P., Harmatha, L., Donoval, D. (2008) Oxygen defect in silicon studied by semi-empirical calculations. Computational Materials Science, 42 (2). 380-384 doi:10.1016/j.commatsci.2007.05.017 |
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| Plain Text | Ballo, P., Harmatha, L., Donoval, D. (2008) Oxygen defect in silicon studied by semi-empirical calculations. Computational Materials Science, 42 (2). 380-384 doi:10.1016/j.commatsci.2007.05.017 |
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| In | (2008, April) Computational Materials Science Vol. 42 (2) Elsevier BV |
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