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Schäfer, M, Teschauer, I, Kadinski, L, Selder, M (2002) A numerical approach for the solution of coupled fluid–solid and thermal stress problems in crystal growth processes. Computational Materials Science, 24 (3). 409-419 doi:10.1016/s0927-0256(01)00262-2

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Reference TypeJournal (article/letter/editorial)
TitleA numerical approach for the solution of coupled fluid–solid and thermal stress problems in crystal growth processes
JournalComputational Materials Science
AuthorsSchäfer, MAuthor
Teschauer, IAuthor
Kadinski, LAuthor
Selder, MAuthor
Year2002 (June)Volume24
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0927-0256(01)00262-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9503557Long-form Identifiermindat:1:5:9503557:4
GUID0
Full ReferenceSchäfer, M, Teschauer, I, Kadinski, L, Selder, M (2002) A numerical approach for the solution of coupled fluid–solid and thermal stress problems in crystal growth processes. Computational Materials Science, 24 (3). 409-419 doi:10.1016/s0927-0256(01)00262-2
Plain TextSchäfer, M, Teschauer, I, Kadinski, L, Selder, M (2002) A numerical approach for the solution of coupled fluid–solid and thermal stress problems in crystal growth processes. Computational Materials Science, 24 (3). 409-419 doi:10.1016/s0927-0256(01)00262-2
In(2002, June) Computational Materials Science Vol. 24 (3) Elsevier BV

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Durst, F., Kadinski, L., Schäfer, M. (1995) A multigrid solver for fluid flow and mass transfer coupled with grey-body surface radiation for the numerical simulation of chemical vapor deposition processes. Journal of Crystal Growth, 146 (1). 202-208 doi:10.1016/0022-0248(94)00571-0
Selder, M, Kadinski, L, Durst, F, Hofmann, D (2001) Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions. Journal of Crystal Growth, 226 (4). 501-510 doi:10.1016/s0022-0248(01)01401-4
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Selder, M., Kadinski, L., Durst, F., Straubinger, Thomas L., Wellmann, Peter J., Hofmann, Dieter (2001) Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals. Materials Science Forum, 353. 65-68 doi:10.4028/www.scientific.net/msf.353-356.65
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Uematsu, M., Kageshima, H., Shiraishi, K. (2002) Microscopic mechanism of thermal silicon oxide growth. Computational Materials Science, 24 (1). 229-234 doi:10.1016/s0927-0256(02)00199-4
Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A. (2001) Impact of source material on silicon carbide vapor transport growth process. Journal of Crystal Growth, 225 (2). 312-316 doi:10.1016/s0022-0248(01)00881-8
(2012) IFC. Computational Materials Science, 60. doi:10.1016/s0927-0256(12)00262-5
Jiang, M., Jasiuk, I., Ostoja-Starzewski, M. (2002) Apparent thermal conductivity of periodic two-dimensional composites. Computational Materials Science, 25 (3). 329-338 doi:10.1016/s0927-0256(02)00234-3
Selder, M., Kadinski, L., Makarov, Yu., Durst, F., Wellmann, P., Straubinger, T., Hofmann, D., Karpov, S., Ramm, M. (2000) Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT. Journal of Crystal Growth, 211 (1). 333-338 doi:10.1016/s0022-0248(99)00853-2
Zhang, Baosheng, Gasik, Michael M. (2002) Stress evolution in graded materials during densification by sintering processes. Computational Materials Science, 25 (1). 264-271 doi:10.1016/s0927-0256(02)00271-9
 
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