Uematsu, M., Kageshima, H., Shiraishi, K. (2002) Microscopic mechanism of thermal silicon oxide growth. Computational Materials Science, 24 (1). 229-234 doi:10.1016/s0927-0256(02)00199-4

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Reference Type	Journal (article/letter/editorial)
Title	Microscopic mechanism of thermal silicon oxide growth
Journal	Computational Materials Science
Authors	Uematsu, M.		Author
	Kageshima, H.		Author
	Shiraishi, K.		Author
Year	2002 (May)	Volume	24
Issue	1
Publisher	Elsevier BV
DOI	doi:10.1016/s0927-0256(02)00199-4Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9503541	Long-form Identifier	mindat:1:5:9503541:3
GUID	0
Full Reference	Uematsu, M., Kageshima, H., Shiraishi, K. (2002) Microscopic mechanism of thermal silicon oxide growth. Computational Materials Science, 24 (1). 229-234 doi:10.1016/s0927-0256(02)00199-4
Plain Text	Uematsu, M., Kageshima, H., Shiraishi, K. (2002) Microscopic mechanism of thermal silicon oxide growth. Computational Materials Science, 24 (1). 229-234 doi:10.1016/s0927-0256(02)00199-4
In	(2002, May) Computational Materials Science Vol. 24 (1) Elsevier BV

	Kageshima, H., Uematsu, M., Akagi, K., Tsuneyuki, S., Akiyama, T., Shiraishi, K. (2006) Mechanism of oxide deformation during silicon thermal oxidation. Physica B: Condensed Matter, 376. 407-410 doi:10.1016/j.physb.2005.12.105
	*Estève, A, Rouhani, M.Djafari, Estève, D (2002) Charge transfer: a key issue in silicon thermal oxidation growth. Computational Materials Science, 24 (1). 241-245 doi:10.1016/s0927-0256(02)00201-x*
	*Barillaro, G., Bruschi, P., Pieri, F. (2002) Two-dimensional macroscopical simulations of porous silicon growth. Computational Materials Science, 24 (1). 99-104 doi:10.1016/s0927-0256(02)00170-2*
	*(2002) Author index. Computational Materials Science, 24 (1). 291-293 doi:10.1016/s0927-0256(02)00306-3*
	*Uzdin, V.M. (2002) Epitaxial growth regims and correlations between magnetic and chemical structures. Computational Materials Science, 24 (1). 186-191 doi:10.1016/s0927-0256(02)00185-4*
	*(2002) Editorial board. Computational Materials Science, 25 (1). doi:10.1016/s0927-0256(02)00346-4*
	*(2002) Author index to Volume 24. Computational Materials Science, 24 (4). 545-548 doi:10.1016/s0927-0256(02)00284-7*
	*Jensen, Pablo, Combe, Nicolas (2002) Understanding the growth of nanocluster films. Computational Materials Science, 24 (1). 78-87 doi:10.1016/s0927-0256(02)00167-2*
	*Braescu, L, Balint, A.M, Balint, St (2002) Temperature control of filament growth. Computational Materials Science, 24 (1). 252-256 doi:10.1016/s0927-0256(02)00179-9*
	*Dreysse, Hugues, Nieminen, Risto M., Wille, Luc T. (2002) Preface. Computational Materials Science, 24 (1). doi:10.1016/s0927-0256(02)00157-x*
	Korkin, Anatoli A., Bersuker, Gennadi I., Huff, Howard R. (2002) Atomistic model of electric stress induced defect generation in silicon oxide. Computational Materials Science, 24 (1). 223-228 doi:10.1016/s0927-0256(02)00202-1

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Uematsu, M., Kageshima, H., Shiraishi, K. (2002) Microscopic mechanism of thermal silicon oxide growth. Computational Materials Science, 24 (1). 229-234 doi:10.1016/s0927-0256(02)00199-4

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