Estève, A, Rouhani, M.Djafari, Estève, D (2002) Charge transfer: a key issue in silicon thermal oxidation growth. Computational Materials Science, 24 (1). 241-245 doi:10.1016/s0927-0256(02)00201-x

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Reference Type	Journal (article/letter/editorial)
Title	Charge transfer: a key issue in silicon thermal oxidation growth
Journal	Computational Materials Science
Authors	Estève, A		Author
	Rouhani, M.Djafari		Author
	Estève, D		Author
Year	2002 (May)	Volume	24
Issue	1
Publisher	Elsevier BV
DOI	doi:10.1016/s0927-0256(02)00201-xSearch in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9503543	Long-form Identifier	mindat:1:5:9503543:1
GUID	0
Full Reference	Estève, A, Rouhani, M.Djafari, Estève, D (2002) Charge transfer: a key issue in silicon thermal oxidation growth. Computational Materials Science, 24 (1). 241-245 doi:10.1016/s0927-0256(02)00201-x
Plain Text	Estève, A, Rouhani, M.Djafari, Estève, D (2002) Charge transfer: a key issue in silicon thermal oxidation growth. Computational Materials Science, 24 (1). 241-245 doi:10.1016/s0927-0256(02)00201-x
In	(2002, May) Computational Materials Science Vol. 24 (1) Elsevier BV

	Estève, A., Rouhani, M.Djafari, Estève, D. (1998) First principle calculation of oxygen adsorption on a (1 0 0) silicon surface — First stages of the thermal oxidation. Computational Materials Science, 10 (1). 94-98 doi:10.1016/s0927-0256(97)00171-7
	Estève, A., Djafari Rouhani, M., Jeloaica, L., Estève, D. (2003) DFT investigation of HfCl 4 decomposition on hydroxylated SiO 2 : first stage of HfO 2 atomic layer deposition. Computational Materials Science, 27 (1). 75-80 doi:10.1016/s0927-0256(02)00428-7
	Estève, A., Djafari Rouhani, M., Estève, D. (1999) (100) Silicon oxidation: first principle investigation of basic mechanisms. Journal of Non-Crystalline Solids, 245 (1) 150-153 doi:10.1016/s0022-3093(98)00859-x
	*Uematsu, M., Kageshima, H., Shiraishi, K. (2002) Microscopic mechanism of thermal silicon oxide growth. Computational Materials Science, 24 (1). 229-234 doi:10.1016/s0927-0256(02)00199-4*
	Rouhani, M.Djafari, Kassem, H., Dalla Torre, J., Landa, G., Estève, D. (2002) Kinetic Monte Carlo simulation of intermixing during semiconductor heteroepitaxy. Applied Surface Science, 188. 24-28 doi:10.1016/s0169-4332(01)00713-9
	Rouhani, M.Djafari, Gué, A.M., Sahlaoui, M., Estève, D. (1992) Strained semiconductor structures: simulation of the first stages of the growth. Surface Science Letters, 276 (1). doi:10.1016/0167-2584(92)90077-i
	Rouhani, M.Djafari, Gué, A.M., Sahlaoui, M., Estève, D. (1992) Strained semiconductor structures: simulation of the first stages of the growth. Surface Science, 276 (1). 109-121 doi:10.1016/0039-6028(92)90700-g
	*Schröder, Elsebeth (2002) Interaction effects in magnesium oxidation: a lattice-gas simulation. Computational Materials Science, 24 (1). 105-110 doi:10.1016/s0927-0256(02)00171-4*
	Dkhissi, A., Estève, A., Jeloaica, L., Djafari-Rouhani, M., Estève, D. (2005) Comparative study of the monolayers A3Si(CH2)nOCOCH3 (A=Cl,OH) adsorpted on silica surface. Computational Materials Science, 33 (1). 282-286 doi:10.1016/j.commatsci.2004.12.045
	*Barillaro, G., Bruschi, P., Pieri, F. (2002) Two-dimensional macroscopical simulations of porous silicon growth. Computational Materials Science, 24 (1). 99-104 doi:10.1016/s0927-0256(02)00170-2*
	*(2002) Author index. Computational Materials Science, 24 (1). 291-293 doi:10.1016/s0927-0256(02)00306-3*

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Estève, A, Rouhani, M.Djafari, Estève, D (2002) Charge transfer: a key issue in silicon thermal oxidation growth. Computational Materials Science, 24 (1). 241-245 doi:10.1016/s0927-0256(02)00201-x

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