Tutov, E. A., Ryabtsev, S. V., Tutov, E. E., Bormontov, E. N. (2006) Silicon MOS structures with nonstoichiometric metal-oxide semiconductors. Technical Physics, 51 (12). 1604-1607 doi:10.1134/s1063784206120097

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Reference Type	Journal (article/letter/editorial)
Title	Silicon MOS structures with nonstoichiometric metal-oxide semiconductors
Journal	Technical Physics
Authors	Tutov, E. A.		Author
	Ryabtsev, S. V.		Author
	Tutov, E. E.		Author
	Bormontov, E. N.		Author
Year	2006 (December)	Volume	51
Issue	12
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/s1063784206120097Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9005643	Long-form Identifier	mindat:1:5:9005643:9
GUID	0
Full Reference	Tutov, E. A., Ryabtsev, S. V., Tutov, E. E., Bormontov, E. N. (2006) Silicon MOS structures with nonstoichiometric metal-oxide semiconductors. Technical Physics, 51 (12). 1604-1607 doi:10.1134/s1063784206120097
Plain Text	Tutov, E. A., Ryabtsev, S. V., Tutov, E. E., Bormontov, E. N. (2006) Silicon MOS structures with nonstoichiometric metal-oxide semiconductors. Technical Physics, 51 (12). 1604-1607 doi:10.1134/s1063784206120097
In	(2006, December) Technical Physics Vol. 51 (12) Pleiades Publishing Ltd

	*Tutov, E. A., Ryabtsev, S. V., Bormontov, E. N. (1997) Functional properties of silicon/non-native-oxide heterostructures. Technical Physics Letters, 23. 456-458 doi:10.1134/1.1261713*
	Tutov, E. A., Pavlenko, M. N., Tutov, E. E., Protasova, I. V., Bormontov, E. N. (2006) Equilibrium and nonequilibrium electrode processes on porous silicon. Technical Physics Letters, 32. 558-560 doi:10.1134/s1063785006070029
	Tutov, E. A., Bormontov, E. N., Pavlenko, M. N., Netesova, G. A., Tutov, E. E. (2005) MIS structure with polyamide insulator under the conditions of water vapor sorption. Technical Physics, 50 (8). 1048-1052 doi:10.1134/1.2014537
	*Tutov, E. A., Andryukov, A. Yu., Ryabtsev, S. V. (2000) Nonequilibrium processes in capacitive sensors based on porous silicon. Technical Physics Letters, 26. 778-780 doi:10.1134/1.1315491*
	Tutov, E. A., Bormontov, E. N., Kashkarov, V. M., Pavlenko, M. N., Domashevskaya, É. P. (2003) Influence of water vapor adsorption on the C-V characteristics of heterostructures containing porous silicon. Technical Physics, 48 (11). 1442-1448 doi:10.1134/1.1626777
	*Tutov, E. A. (2012) Solid structures with bioorganic films on silicon. Technical Physics, 57 (6). 765-769 doi:10.1134/s1063784212060242*
	Domashevskaya, É. P., Ryabtsev, S. V., Tutov, E. A., Yurakov, Yu. A., Chuvenkova, O. A., Lukin, A. N. (2006) Optical properties of SnO2−x nanolayers. Technical Physics Letters, 32. 782-784 doi:10.1134/s1063785006090148
	*Tutov, E. A., Ryabtsev, S. V., Andryukov, A. Yu. (2000) Detection of nitrogen dioxide by amorphous films of tungsten trioxide. Technical Physics Letters, 26. 109-111 doi:10.1134/1.1262758*
	Tutov, E. A., Goloshchapov, D. L., Zlomanov, V. P. (2019) Semiconductor–Metal Phase Transition and “Tristable” Electrical Switching in Nanocrystalline Vanadium Oxide Films on Silicon. Technical Physics Letters, 45. 584-587 doi:10.1134/s1063785019060312
	Tutov, E. A., Pavlenko, M. N., Protasova, I. V., Kashkarov, V. M. (2002) The interaction of porous silicon with water: A chemographic effect. Technical Physics Letters, 28. 729-731 doi:10.1134/1.1511767
	Bormontov, E. N., Borisov, S. N., Lezhenin, V. P., Lukin, S. V. (2000) Rapid monitoring of the charging properties of ion-doped MOS structures. Technical Physics Letters, 26. 971-973 doi:10.1134/1.1329687

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Tutov, E. A., Ryabtsev, S. V., Tutov, E. E., Bormontov, E. N. (2006) Silicon MOS structures with nonstoichiometric metal-oxide semiconductors. Technical Physics, 51 (12). 1604-1607 doi:10.1134/s1063784206120097

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