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Tutov, E. A., Ryabtsev, S. V., Bormontov, E. N. (1997) Functional properties of silicon/non-native-oxide heterostructures. Technical Physics Letters, 23. 456-458 doi:10.1134/1.1261713

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Reference TypeJournal (article/letter/editorial)
TitleFunctional properties of silicon/non-native-oxide heterostructures
JournalTechnical Physics Letters
AuthorsTutov, E. A.Author
Ryabtsev, S. V.Author
Bormontov, E. N.Author
Year1997 (June)Volume23
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1261713Search in ResearchGate
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Mindat Ref. ID6202860Long-form Identifiermindat:1:5:6202860:0
GUID0
Full ReferenceTutov, E. A., Ryabtsev, S. V., Bormontov, E. N. (1997) Functional properties of silicon/non-native-oxide heterostructures. Technical Physics Letters, 23. 456-458 doi:10.1134/1.1261713
Plain TextTutov, E. A., Ryabtsev, S. V., Bormontov, E. N. (1997) Functional properties of silicon/non-native-oxide heterostructures. Technical Physics Letters, 23. 456-458 doi:10.1134/1.1261713
In(n.d.) Technical Physics Letters Vol. 23. Pleiades Publishing Ltd

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Tutov, E. A., Ryabtsev, S. V., Tutov, E. E., Bormontov, E. N. (2006) Silicon MOS structures with nonstoichiometric metal-oxide semiconductors. Technical Physics, 51 (12). 1604-1607 doi:10.1134/s1063784206120097
Tutov, E. A., Pavlenko, M. N., Tutov, E. E., Protasova, I. V., Bormontov, E. N. (2006) Equilibrium and nonequilibrium electrode processes on porous silicon. Technical Physics Letters, 32. 558-560 doi:10.1134/s1063785006070029
Tutov, E. A., Bormontov, E. N., Kashkarov, V. M., Pavlenko, M. N., Domashevskaya, É. P. (2003) Influence of water vapor adsorption on the C-V characteristics of heterostructures containing porous silicon. Technical Physics, 48 (11). 1442-1448 doi:10.1134/1.1626777
Tutov, E. A., Andryukov, A. Yu., Ryabtsev, S. V. (2000) Nonequilibrium processes in capacitive sensors based on porous silicon. Technical Physics Letters, 26. 778-780 doi:10.1134/1.1315491
Domashevskaya, É. P., Ryabtsev, S. V., Tutov, E. A., Yurakov, Yu. A., Chuvenkova, O. A., Lukin, A. N. (2006) Optical properties of SnO2−x nanolayers. Technical Physics Letters, 32. 782-784 doi:10.1134/s1063785006090148
Tutov, E. A., Bormontov, E. N., Pavlenko, M. N., Netesova, G. A., Tutov, E. E. (2005) MIS structure with polyamide insulator under the conditions of water vapor sorption. Technical Physics, 50 (8). 1048-1052 doi:10.1134/1.2014537
Tutov, E. A., Ryabtsev, S. V., Andryukov, A. Yu. (2000) Detection of nitrogen dioxide by amorphous films of tungsten trioxide. Technical Physics Letters, 26. 109-111 doi:10.1134/1.1262758
Bormontov, E. N., Borisov, S. N., Lezhenin, V. P., Lukin, S. V. (2000) Rapid monitoring of the charging properties of ion-doped MOS structures. Technical Physics Letters, 26. 971-973 doi:10.1134/1.1329687
Shalygina, E. E., Perepelova, E. V., Kozlovskiĭ, L. V., Tamanis, E., Mukasheva, M. A., Shalygin, A. N. (2007) Magnetic properties of thin-film Co/Fe/Ni magnetic systems. Technical Physics Letters, 33. 456-458 doi:10.1134/s106378500706003x
Tutov, E. A., Pavlenko, M. N., Protasova, I. V., Kashkarov, V. M. (2002) The interaction of porous silicon with water: A chemographic effect. Technical Physics Letters, 28. 729-731 doi:10.1134/1.1511767
Bormontov, E. N., Lukin, S. V. (1997) Investigation of interfacial states in MIS structures by a single-frequency admittance method. Technical Physics, 42 (10). 1162-1165 doi:10.1134/1.1258794
 
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