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Krishnaraja, Abinaya, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik (2019) Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap. Applied Physics Letters, 115 (14). 143505pp. doi:10.1063/1.5115296

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Reference TypeJournal (article/letter/editorial)
TitleReducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
JournalApplied Physics Letters
AuthorsKrishnaraja, AbinayaAuthor
Svensson, JohannesAuthor
Lind, ErikAuthor
Wernersson, Lars-ErikAuthor
Year2019 (September 30)Volume115
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.5115296Search in ResearchGate
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Mindat Ref. ID8658331Long-form Identifiermindat:1:5:8658331:6
GUID0
Full ReferenceKrishnaraja, Abinaya, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik (2019) Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap. Applied Physics Letters, 115 (14). 143505pp. doi:10.1063/1.5115296
Plain TextKrishnaraja, Abinaya, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik (2019) Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap. Applied Physics Letters, 115 (14). 143505pp. doi:10.1063/1.5115296
In(2019, September) Applied Physics Letters Vol. 115 (14) AIP Publishing

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Krishnaraja, Abinaya, Zhu, Zhongyunshen, Svensson, Johannes, Wernersson, Lars-Erik (2024) III–V heterostructure tunnel field-effect transistor operation at different temperature regimes. Applied Physics Letters, 125 (19). doi:10.1063/5.0218490
Mo, Jiongjiong, Lind, Erik, Roll, Guntrade, Wernersson, Lars-Erik (2014) Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 105 (3). 33516pp. doi:10.1063/1.4891569
Dzhigaev, Dmitry, Svensson, Johannes, Krishnaraja, Abinaya, Zhu, Zhongyunshen, Ren, Zhe, Liu, Yi, Kalbfleisch, Sebastian, Björling, Alexander, Lenrick, Filip, Balogh, Zoltan Imre, Hammarberg, Susanna, Wallentin, Jesper, Timm, Rainer, Wernersson, Lars-Erik, Mikkelsen, Anders (2022) Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. Nanoscale, 14 (13) 5247 doi:10.1039/d2nr90060b
Babadi, Aein S., Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik (2017) Impact of doping and diameter on the electrical properties of GaSb nanowires. Applied Physics Letters, 110 (5). 53502pp. doi:10.1063/1.4975374
Svensson, Johannes, Chen, Yang, Anttu, Nicklas, Pistol, Mats-Erik, Wernersson, Lars-Erik (2017) Increased absorption in InAsSb nanowire clusters through coupled optical modes. Applied Physics Letters, 110 (8). 81104pp. doi:10.1063/1.4977032
Dzhigaev, Dmitry, Svensson, Johannes, Krishnaraja, Abinaya, Zhu, Zhongyunshen, Ren, Zhe, Liu, Yi, Kalbfleisch, Sebastian, Björling, Alexander, Lenrick, Filip, Balogh, Zoltan Imre, Hammarberg, Susanna, Wallentin, Jesper, Timm, Rainer, Wernersson, Lars-Erik, Mikkelsen, Anders (2020) Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. Nanoscale, 12 (27) 14487-14493 doi:10.1039/d0nr02260h
Saketh Ram, Mamidala, Svensson, Johannes, Wernersson, Lars-Erik (2023) Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors. ACS Applied Materials & Interfaces, 15 (15) 19085-19091 doi:10.1021/acsami.2c21669
Wernersson, Lars-Erik, Lind, Erik, Samuelson, Lars, Löwgren, Truls, Ohlsson, Jonas (2007) Nanowire Field-Effect Transistor. Japanese Journal of Applied Physics, 46 (4) 2629-2631 doi:10.1143/jjap.46.2629
Nilsson, Henrik A., Caroff, Philippe, Thelander, Claes, Lind, Erik, Karlström, Olov, Wernersson, Lars-Erik (2010) Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Applied Physics Letters, 96 (15). 153505pp. doi:10.1063/1.3402760
Zota, Cezar B., Borg, Mattias, Wernersson, Lars-Erik, Lind, Erik (2017) Junctionless tri-gate InGaAs MOSFETs. Japanese Journal of Applied Physics, 56 (12) 120306 doi:10.7567/jjap.56.120306
Nilsson, Henrik A., Caroff, Philippe, Lind, Erik, Pistol, Mats-Erik, Thelander, Claes, Wernersson, Lars-Erik (2011) Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors. Journal of Applied Physics, 110 (6). 64510pp. doi:10.1063/1.3633742
 
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