Miah, M. J., Kettler, T., Posilovic, K., Kalosha, V. P., Skoczowsky, D., Rosales, R., Bimberg, D., Pohl, J., Weyers, M. (2014) 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area. Applied Physics Letters, 105 (15). 151105pp. doi:10.1063/1.4898010

See Also

These are possibly similar items as determined by title/reference text matching only.

	Rosales, R., Kalosha, V. P., Posilović, K., Miah, M. J., Bimberg, D., Pohl, J., Weyers, M. (2014) High brightness photonic band crystal semiconductor lasers in the passive mode locking regime. Applied Physics Letters, 105 (16). 161101pp. doi:10.1063/1.4899129
	Posilovic, K., Kettler, T., Shchukin, V. A., Ledentsov, N. N., Pohl, U. W., Bimberg, D., Fricke, J., Ginolas, A., Erbert, G., Tränkle, G., Jönsson, J., Weyers, M. (2008) Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes. Applied Physics Letters, 93 (22). 221102pp. doi:10.1063/1.3040322
	Novikov, I. I., Karachinsky, L. Ya., Maximov, M. V., Shernyakov, Yu. M., Kuznetsov, S. M., Gordeev, N. Yu., Shchukin, V. A., Kop’ev, P. S., Ledentsov, N. N., Ben-Ami, U., Kalosha, V. P., Sharon, A., Kettler, T., Posilovic, K., Bimberg, D., Mikhelashvili, V., Eisenstein, G. (2006) Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal. Applied Physics Letters, 88 (23). 231108pp. doi:10.1063/1.2211948
	Kalosha, V. P., Ledentsov, N. N., Bimberg, D. (2012) Design considerations for large-aperture single-mode oxide-confined vertical-cavity surface-emitting lasers. Applied Physics Letters, 101 (7). 71117pp. doi:10.1063/1.4746422
	Kettler, T., Karachinsky, L. Ya., Ledentsov, N. N., Shchukin, V. A., Fiol, G., Kuntz, M., Lochmann, A., Schulz, O., Reissmann, L., Posilovic, K., Bimberg, D., Novikov, I. I., Shernyakov, Yu. M., Gordeev, N. Yu., Maximov, M. V., Kryzhanovskaya, N. V., Zhukov, A. E., Semenova, E. S., Vasil’ev, A. P., Ustinov, V. M., Kovsh, A. R. (2006) Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate. Applied Physics Letters, 89 (4). 41113pp. doi:10.1063/1.2236291
	Karachinsky, L. Ya., Novikov, I. I., Shernyakov, Yu. M., Kuznetsov, S. M., Gordeev, N. Yu., Maximov, M. V., Kop’ev, P. S., Ben-Ami, U., Arbiv, D. B., Sharon, A., Kettler, T., Posilovic, K., Schulz, O., Shchukin, V. A., Pohl, U. W., Ledentsov, N. N., Bimberg, D. (2006) High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence. Applied Physics Letters, 89 (23). 231114pp. doi:10.1063/1.2403906
	Strittmatter, A., Germann, T. D., Kettler, Th., Posilovic, K., Pohl, U. W., Bimberg, D. (2006) Alternative precursor metal-organic chemical vapor deposition of InGaAs∕GaAs quantum dot laser diodes with ultralow threshold at 1.25μm. Applied Physics Letters, 88 (26). 262104pp. doi:10.1063/1.2218059
	Vakhshoori, D., Wynn, J. D., Zydzik, G. J., Leibenguth, R. E., Asom, M. T., Kojima, K., Morgan, R. A. (1993) Top‐surface emitting lasers with 1.9 V threshold voltage and the effect of spatial hole burning on their transverse mode operation and efficiencies. Applied Physics Letters, 62 (13). 1448-1450 doi:10.1063/1.108654
	Garrod, T., Olson, D., Klaus, M., Zenner, C., Galstad, C., Mawst, L., Botez, D. (2014) 50% continuous-wave wallplug efficiency from 1.53μm-emitting broad-area diode lasers. Applied Physics Letters, 105 (7). 71101pp. doi:10.1063/1.4893576
	Blokhin, S. A., Bobrov, M. A., Maleev, N. A., Kuzmenkov, A. G., Sakharov, A. V., Blokhin, A. A., Moser, P., Lott, J. A., Bimberg, D., Ustinov, V. M. (2014) Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning. Applied Physics Letters, 105 (6). 61104pp. doi:10.1063/1.4892885
	Germann, T.D., Strittmatter, A., Kettler, Th., Posilovic, K., Pohl, U.W., Bimberg, D. (2007) MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3μm. Journal of Crystal Growth, 298. 591-594 doi:10.1016/j.jcrysgro.2006.10.081