Posilovic, K., Kettler, T., Shchukin, V. A., Ledentsov, N. N., Pohl, U. W., Bimberg, D., Fricke, J., Ginolas, A., Erbert, G., Tränkle, G., Jönsson, J., Weyers, M. (2008) Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes. Applied Physics Letters, 93 (22). 221102pp. doi:10.1063/1.3040322

See Also

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	Karachinsky, L. Ya., Novikov, I. I., Shernyakov, Yu. M., Kuznetsov, S. M., Gordeev, N. Yu., Maximov, M. V., Kop’ev, P. S., Ben-Ami, U., Arbiv, D. B., Sharon, A., Kettler, T., Posilovic, K., Schulz, O., Shchukin, V. A., Pohl, U. W., Ledentsov, N. N., Bimberg, D. (2006) High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence. Applied Physics Letters, 89 (23). 231114pp. doi:10.1063/1.2403906
	Novikov, I. I., Karachinsky, L. Ya., Maximov, M. V., Shernyakov, Yu. M., Kuznetsov, S. M., Gordeev, N. Yu., Shchukin, V. A., Kop’ev, P. S., Ledentsov, N. N., Ben-Ami, U., Kalosha, V. P., Sharon, A., Kettler, T., Posilovic, K., Bimberg, D., Mikhelashvili, V., Eisenstein, G. (2006) Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal. Applied Physics Letters, 88 (23). 231108pp. doi:10.1063/1.2211948
	Strittmatter, A., Germann, T. D., Kettler, Th., Posilovic, K., Pohl, U. W., Bimberg, D. (2006) Alternative precursor metal-organic chemical vapor deposition of InGaAs∕GaAs quantum dot laser diodes with ultralow threshold at 1.25μm. Applied Physics Letters, 88 (26). 262104pp. doi:10.1063/1.2218059
	Miah, M. J., Kettler, T., Posilovic, K., Kalosha, V. P., Skoczowsky, D., Rosales, R., Bimberg, D., Pohl, J., Weyers, M. (2014) 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area. Applied Physics Letters, 105 (15). 151105pp. doi:10.1063/1.4898010
	Mutig, A., Blokhin, S. A., Nadtochiy, A. M., Fiol, G., Lott, J. A., Shchukin, V. A., Ledentsov, N. N., Bimberg, D. (2009) Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers. Applied Physics Letters, 95 (13). 131101pp. doi:10.1063/1.3231446
	Kettler, T., Karachinsky, L. Ya., Ledentsov, N. N., Shchukin, V. A., Fiol, G., Kuntz, M., Lochmann, A., Schulz, O., Reissmann, L., Posilovic, K., Bimberg, D., Novikov, I. I., Shernyakov, Yu. M., Gordeev, N. Yu., Maximov, M. V., Kryzhanovskaya, N. V., Zhukov, A. E., Semenova, E. S., Vasil’ev, A. P., Ustinov, V. M., Kovsh, A. R. (2006) Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate. Applied Physics Letters, 89 (4). 41113pp. doi:10.1063/1.2236291
	Germann, T. D., Strittmatter, A., Pohl, J., Pohl, U. W., Bimberg, D., Rautiainen, J., Guina, M., Okhotnikov, O. G. (2008) Temperature-stable operation of a quantum dot semiconductor disk laser. Applied Physics Letters, 93 (5). 51104pp. doi:10.1063/1.2968137
	Germann, T. D., Strittmatter, A., Pohl, J., Pohl, U. W., Bimberg, D., Rautiainen, J., Guina, M., Okhotnikov, O. G. (2008) High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots. Applied Physics Letters, 92 (10). 101123pp. doi:10.1063/1.2898165
	Rosales, R., Kalosha, V. P., Posilović, K., Miah, M. J., Bimberg, D., Pohl, J., Weyers, M. (2014) High brightness photonic band crystal semiconductor lasers in the passive mode locking regime. Applied Physics Letters, 105 (16). 161101pp. doi:10.1063/1.4899129
	Arar, B., Wenzel, H., Güther, R., Brox, O., Maaßdorf, A., Wicht, A., Erbert, G., Weyers, M., Tränkle, G., Fernando, H. N. J., Peters, A. (2014) Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers. Applied Physics B, 116 (1). 175-181 doi:10.1007/s00340-013-5671-3
	Beister, G., Maege, J., Gutsche, D., Erbert, G., Sebastian, J., Vogel, K., Weyers, M., Würfl, J., Daga, O. P. (1996) Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes. Applied Physics Letters, 68 (18). 2467-2468 doi:10.1063/1.115822