Park, Hyun Hee, Kang, Pil Soo, Kim, Gyu Tae, Ha, Jeong Sook (2010) Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors. Applied Physics Letters, 96 (10). 102908pp. doi:10.1063/1.3357432
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors | ||
| Journal | Applied Physics Letters | ||
| Authors | Park, Hyun Hee | Author | |
| Kang, Pil Soo | Author | ||
| Kim, Gyu Tae | Author | ||
| Ha, Jeong Sook | Author | ||
| Year | 2010 (March 8) | Volume | 96 |
| Issue | 10 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3357432Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8581900 | Long-form Identifier | mindat:1:5:8581900:1 |
| GUID | 0 | ||
| Full Reference | Park, Hyun Hee, Kang, Pil Soo, Kim, Gyu Tae, Ha, Jeong Sook (2010) Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors. Applied Physics Letters, 96 (10). 102908pp. doi:10.1063/1.3357432 | ||
| Plain Text | Park, Hyun Hee, Kang, Pil Soo, Kim, Gyu Tae, Ha, Jeong Sook (2010) Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors. Applied Physics Letters, 96 (10). 102908pp. doi:10.1063/1.3357432 | ||
| In | (2010, March) Applied Physics Letters Vol. 96 (10) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
