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Fang, Lina Wei-Wei, Pan, Ji-Sheng, Zhao, Rong, Shi, Luping, Chong, Tow-Chong, Samudra, Ganesh, Yeo, Yee-Chia (2008) Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials. Applied Physics Letters, 92 (3). 32107pp. doi:10.1063/1.2837189

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Reference TypeJournal (article/letter/editorial)
TitleBand alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials
JournalApplied Physics Letters
AuthorsFang, Lina Wei-WeiAuthor
Pan, Ji-ShengAuthor
Zhao, RongAuthor
Shi, LupingAuthor
Chong, Tow-ChongAuthor
Samudra, GaneshAuthor
Yeo, Yee-ChiaAuthor
Year2008 (January 21)Volume92
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2837189Search in ResearchGate
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Mindat Ref. ID8565342Long-form Identifiermindat:1:5:8565342:3
GUID0
Full ReferenceFang, Lina Wei-Wei, Pan, Ji-Sheng, Zhao, Rong, Shi, Luping, Chong, Tow-Chong, Samudra, Ganesh, Yeo, Yee-Chia (2008) Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials. Applied Physics Letters, 92 (3). 32107pp. doi:10.1063/1.2837189
Plain TextFang, Lina Wei-Wei, Pan, Ji-Sheng, Zhao, Rong, Shi, Luping, Chong, Tow-Chong, Samudra, Ganesh, Yeo, Yee-Chia (2008) Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials. Applied Physics Letters, 92 (3). 32107pp. doi:10.1063/1.2837189
In(2008, January) Applied Physics Letters Vol. 92 (3) AIP Publishing

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