登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Yeo, Yee-Chia, King, Tsu-Jae, Hu, Chenming (2002) Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology. Journal of Applied Physics, 92 (12). 7266-7271 doi:10.1063/1.1521517

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleMetal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
JournalJournal of Applied Physics
AuthorsYeo, Yee-ChiaAuthor
King, Tsu-JaeAuthor
Hu, ChenmingAuthor
Year2002 (December 15)Volume92
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1521517Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5115724Long-form Identifiermindat:1:5:5115724:3
GUID0
Full ReferenceYeo, Yee-Chia, King, Tsu-Jae, Hu, Chenming (2002) Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology. Journal of Applied Physics, 92 (12). 7266-7271 doi:10.1063/1.1521517
Plain TextYeo, Yee-Chia, King, Tsu-Jae, Hu, Chenming (2002) Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology. Journal of Applied Physics, 92 (12). 7266-7271 doi:10.1063/1.1521517
In(2002, December) Journal of Applied Physics Vol. 92 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Yeo, Yee-Chia, King, Tsu-Jae, Hu, Chenming (2002) Direct tunneling leakage current and scalability of alternative gate dielectrics. Applied Physics Letters, 81 (11). 2091-2093 doi:10.1063/1.1506941
Yu, Bin, Ju, Dong-Hyuk, Kepler, Nick, King, Tsu-Jae, Hu, Chenming (1997) Impact of Gate Microstructure on Complementary Metal-Oxide-Semiconductor Transistor Performance. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l1150
Fang, Lina Wei-Wei, Pan, Ji-Sheng, Zhao, Rong, Shi, Luping, Chong, Tow-Chong, Samudra, Ganesh, Yeo, Yee-Chia (2008) Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials. Applied Physics Letters, 92 (3). 32107pp. doi:10.1063/1.2837189
Zhu, Ming, Chin, Hock-Chun, Samudra, Ganesh S., Yeo, Yee-Chia (2008) Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications. Applied Physics Letters, 92 (12). 123513pp. doi:10.1063/1.2905259
Polishchuk, Igor, Hu, Chenming (2000) Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 76 (14). 1938-1940 doi:10.1063/1.126218
Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia (2007) Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors. Applied Physics Letters, 91 (15). 153501pp. doi:10.1063/1.2798064
Jeon, Sanghun, Hwang, Hyunsang (2002) Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications. Applied Physics Letters, 81 (25). 4856-4858 doi:10.1063/1.1528731
Liu, W. H., Pey, K. L., Raghavan, N., Wu, X., Bosman, M. (2012) Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications. Journal of Applied Physics, 111 (2). 24101pp. doi:10.1063/1.3676255
Lei, Dian, Wang, Wei, Zhang, Zheng, Pan, Jisheng, Gong, Xiao, Liang, Gengchiau, Tok, Eng-Soon, Yeo, Yee-Chia (2016) Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality. Journal of Applied Physics, 119 (2). 24502pp. doi:10.1063/1.4939761
Lu, N., Li, H.-J., Peterson, J. J., Kwong, D. L. (2007) HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices. Applied Physics Letters, 90 (8). 82911pp. doi:10.1063/1.2396891
Jha, Rashmi, Lee, JaeHoon, Majhi, Prashant, Misra, Veena (2005) Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. Applied Physics Letters, 87 (22). 223503pp. doi:10.1063/1.2136425
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.7 12:38:16
Go to top of page