Scappucci, G., Ratto, F., Thompson, D. L., Reusch, T. C. G., Pok, W., Rueß, F. J., Rosei, F., Simmons, M. Y. (2007) Structural and electrical characterization of room temperature ultra-high-vacuum compatible SiO2 for gating scanning tunneling microscope-patterned devices. Applied Physics Letters, 91 (22). 222109pp. doi:10.1063/1.2815926

See Also

These are possibly similar items as determined by title/reference text matching only.

	Hallam, T., Rueß, F. J., Curson, N. J., Goh, K. E. J., Oberbeck, L., Simmons, M. Y., Clark, R. G. (2005) Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy. Applied Physics Letters, 86 (14). 143116pp. doi:10.1063/1.1897064
	Hallam, T., Reusch, T. C. G., Oberbeck, L., Curson, N. J., Simmons, M. Y. (2007) Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal. Journal of Applied Physics, 101 (3). 34305pp. doi:10.1063/1.2433138
	Lee, W. C. T., Scappucci, G., Thompson, D. L., Simmons, M. Y. (2010) Development of a tunable donor quantum dot in silicon. Applied Physics Letters, 96 (4). 43116pp. doi:10.1063/1.3299726
	Reusch, T. C. G., Goh, K. E. J., Pok, W., Lo, W.-C. N., McKibbin, S. R., Simmons, M. Y. (2008) Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001). Journal of Applied Physics, 104 (6). 66104pp. doi:10.1063/1.2977750
	Rueß, F. J., Micolich, A. P., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y. (2008) Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures. Applied Physics Letters, 92 (5). 52101pp. doi:10.1063/1.2840182
	Hallam, T., Butcher, M. J., Goh, K. E. J., Ruess, F. J., Simmons, M. Y. (2007) Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts. Journal of Applied Physics, 102 (3). 34308pp. doi:10.1063/1.2736873
	Rueß, F. J., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y. (2007) Electronic properties of atomically abrupt tunnel junctions in silicon. Physical Review B, 75 (12) doi:10.1103/physrevb.75.121303
	Scappucci, G., Capellini, G., Lee, W. C. T., Simmons, M. Y. (2009) Ultradense phosphorus in germanium delta-doped layers. Applied Physics Letters, 94 (16). 162106pp. doi:10.1063/1.3123391
	Wang, W. C., Zhong, D. Y., Zhu, J., Kalischewski, F., Dou, R. F., Wedeking, K., Wang, Y., Heuer, A., Fuchs, H., Erker, G., Chi, L. F. (2007) Patterned Nucleation Control in Vacuum Deposition of Organic Molecules. Physical Review Letters, 98 (22). doi:10.1103/physrevlett.98.225504
	Rosolen, G. C., Hoole, A. C. F., Welland, M. E., Broers, A. N. (1993) Integrated nanofabrication with the scanning electron microscope and scanning tunneling microscope. Applied Physics Letters, 63 (17). 2435-2437 doi:10.1063/1.110499
	Wiebe, J., Wachowiak, A., Meier, F., Haude, D., Foster, T., Morgenstern, M., Wiesendanger, R. (2004) A 300 mK ultra-high vacuum scanning tunneling microscope for spin-resolved spectroscopy at high energy resolution. Review of Scientific Instruments, 75 (11). 4871-4879 doi:10.1063/1.1794431