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Rueß, F. J., Micolich, A. P., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y. (2008) Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures. Applied Physics Letters, 92 (5). 52101pp. doi:10.1063/1.2840182

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Reference TypeJournal (article/letter/editorial)
TitleOhmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures
JournalApplied Physics Letters
AuthorsRueß, F. J.Author
Micolich, A. P.Author
Pok, W.Author
Goh, K. E. J.Author
Hamilton, A. R.Author
Simmons, M. Y.Author
Year2008 (February 4)Volume92
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2840182Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8565728Long-form Identifiermindat:1:5:8565728:9
GUID0
Full ReferenceRueß, F. J., Micolich, A. P., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y. (2008) Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures. Applied Physics Letters, 92 (5). 52101pp. doi:10.1063/1.2840182
Plain TextRueß, F. J., Micolich, A. P., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y. (2008) Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures. Applied Physics Letters, 92 (5). 52101pp. doi:10.1063/1.2840182
In(2008, February) Applied Physics Letters Vol. 92 (5) AIP Publishing

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Rueß, F. J., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y. (2007) Electronic properties of atomically abrupt tunnel junctions in silicon. Physical Review B, 75 (12) doi:10.1103/physrevb.75.121303
Reusch, T. C. G., Goh, K. E. J., Pok, W., Lo, W.-C. N., McKibbin, S. R., Simmons, M. Y. (2008) Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001). Journal of Applied Physics, 104 (6). 66104pp. doi:10.1063/1.2977750
Hallam, T., Rueß, F. J., Curson, N. J., Goh, K. E. J., Oberbeck, L., Simmons, M. Y., Clark, R. G. (2005) Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy. Applied Physics Letters, 86 (14). 143116pp. doi:10.1063/1.1897064
Rueß, Frank J., Weber, Bent, Goh, Kuan Eng J., Klochan, Oleh, Hamilton, Alex R., Simmons, Michelle Y. (2007) One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy. Physical Review B, 76 (8) doi:10.1103/physrevb.76.085403
Goh, K. E. J., Oberbeck, L., Simmons, M. Y., Hamilton, A. R., Clark, R. G. (2004) Effect of encapsulation temperature on Si:P δ-doped layers. Applied Physics Letters, 85 (21). 4953-4955 doi:10.1063/1.1827940
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Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F., Ritchie, D. A., Reuter, D., Wieck, A. D., Hamilton, A. R. (2012) Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100 (5). 52101pp. doi:10.1063/1.3673837
Taskinen, L. J., Starrett, R. P., Martin, T. P., Micolich, A. P., Hamilton, A. R., Simmons, M. Y., Ritchie, D. A., Pepper, M. (2008) Radio-frequency reflectometry on large gated two-dimensional systems. Review of Scientific Instruments, 79 (12). 123901pp. doi:10.1063/1.3030860
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Goh, K. E. J., Augarten, Y., Oberbeck, L., Simmons, M. Y. (2008) Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal. Applied Physics Letters, 93 (14). 142105pp. doi:10.1063/1.2996582
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