Yang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Yu, K. L., Tang, M.-T., Lin, B.-H., Hsu, C.-H., Kwo, J. (2007) Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111). Applied Physics Letters, 91 (20). 202909pp. doi:10.1063/1.2816121

See Also

These are possibly similar items as determined by title/reference text matching only.

	Hsu, C.-H., Yang, Z. K., Yu, K. L., Tang, M.-T., Huang, M. L., Lee, W. C., Lee, Y. J., Chang, P., Hong, M., Kwo, J. (2007) Structural and compositional investigation of yttrium-doped HfO2nano-films. Acta Crystallographica Section A Foundations of Crystallography, 63. doi:10.1107/s0108767307098029
	Hsu, C.-H., Chang, P., Lee, W. C., Yang, Z. K., Lee, Y. J., Hong, M., Kwo, J., Huang, C. M., Lee, H. Y. (2006) Structure of HfO2 films epitaxially grown on GaAs (001). Applied Physics Letters, 89 (12). 122907pp. doi:10.1063/1.2356895
	Yang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Hsu, C.-H., Kwo, J. (2007) Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant. Applied Physics Letters, 90 (15). 152908pp. doi:10.1063/1.2722226
	Nieh, C. W., Lee, Y. J., Lee, W. C., Yang, Z. K., Kortan, A. R., Hong, M., Kwo, J., Hsu, C.-H. (2008) Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection. Applied Physics Letters, 92 (6). 61914pp. doi:10.1063/1.2883939
	Chang, Y. H., Soo, Y. L., Lee, W. C., Huang, M. L., Lee, Y. J., Weng, S. C., Sun, W. H., Hong, M., Kwo, J., Lee, S. F., Ablett, J. M., Kao, C.-C. (2007) Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films. Applied Physics Letters, 91 (8). 82504pp. doi:10.1063/1.2773746
	Chang, Y. C., Chiu, H. C., Lee, Y. J., Huang, M. L., Lee, K. Y., Hong, M., Chiu, Y. N., Kwo, J., Wang, Y. H. (2007) Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN. Applied Physics Letters, 90 (23). 232904pp. doi:10.1063/1.2746057
	Chang, Y. C., Huang, M. L., Lee, K. Y., Lee, Y. J., Lin, T. D., Hong, M., Kwo, J., Lay, T. S., Liao, C. C., Cheng, K. Y. (2008) Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters. Applied Physics Letters, 92 (7). 72901pp. doi:10.1063/1.2883967
	Lee, K. Y., Lee, W. C., Lee, Y. J., Huang, M. L., Chang, C. H., Wu, T. B., Hong, M., Kwo, J. (2006) Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics. Applied Physics Letters, 89 (22). 222906pp. doi:10.1063/1.2397542
	Hong, M., Kortan, A. R., Chang, P., Huang, Y. L., Chen, C. P., Chou, H. Y., Lee, H. Y., Kwo, J., Chu, M.-W., Chen, C. H., Goncharova, L. V., Garfunkel, E., Gustafsson, T. (2005) High-quality nanothickness single-crystal Sc2O3 film grown on Si(111). Applied Physics Letters, 87 (25). 251902pp. doi:10.1063/1.2147711
	Lee, K. Y., Lee, Y. J., Chang, P., Huang, M. L., Chang, Y. C., Hong, M., Kwo, J. (2008) Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As. Applied Physics Letters, 92 (25). 252908pp. doi:10.1063/1.2952826
	Huang, Y. L., Chang, P., Yang, Z. K., Lee, Y. J., Lee, H. Y., Liu, H. J., Kwo, J., Mannaerts, J. P., Hong, M. (2005) Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface. Applied Physics Letters, 86 (19). 191905pp. doi:10.1063/1.1923172