登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Yang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Hsu, C.-H., Kwo, J. (2007) Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant. Applied Physics Letters, 90 (15). 152908pp. doi:10.1063/1.2722226

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleCubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
JournalApplied Physics Letters
AuthorsYang, Z. K.Author
Lee, W. C.Author
Lee, Y. J.Author
Chang, P.Author
Huang, M. L.Author
Hong, M.Author
Hsu, C.-H.Author
Kwo, J.Author
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2722226Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553422Long-form Identifiermindat:1:5:8553422:5
GUID0
Full ReferenceYang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Hsu, C.-H., Kwo, J. (2007) Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant. Applied Physics Letters, 90 (15). 152908pp. doi:10.1063/1.2722226
Plain TextYang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Hsu, C.-H., Kwo, J. (2007) Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant. Applied Physics Letters, 90 (15). 152908pp. doi:10.1063/1.2722226
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Hsu, C.-H., Chang, P., Lee, W. C., Yang, Z. K., Lee, Y. J., Hong, M., Kwo, J., Huang, C. M., Lee, H. Y. (2006) Structure of HfO2 films epitaxially grown on GaAs (001). Applied Physics Letters, 89 (12). 122907pp. doi:10.1063/1.2356895
Yang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Yu, K. L., Tang, M.-T., Lin, B.-H., Hsu, C.-H., Kwo, J. (2007) Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111). Applied Physics Letters, 91 (20). 202909pp. doi:10.1063/1.2816121
Chang, Y. H., Soo, Y. L., Lee, W. C., Huang, M. L., Lee, Y. J., Weng, S. C., Sun, W. H., Hong, M., Kwo, J., Lee, S. F., Ablett, J. M., Kao, C.-C. (2007) Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films. Applied Physics Letters, 91 (8). 82504pp. doi:10.1063/1.2773746
Liu, Y. C., Chang, P., Huang, S. Y., Chang, L. J., Lin, W. C., Lee, S. F., Hong, M., Kwo, J. (2011) Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001). Journal of Applied Physics, 109 (7). 7pp. doi:10.1063/1.3556785
Hsu, C.-H., Yang, Z. K., Yu, K. L., Tang, M.-T., Huang, M. L., Lee, W. C., Lee, Y. J., Chang, P., Hong, M., Kwo, J. (2007) Structural and compositional investigation of yttrium-doped HfO2nano-films. Acta Crystallographica Section A Foundations of Crystallography, 63. doi:10.1107/s0108767307098029
Nieh, C. W., Lee, Y. J., Lee, W. C., Yang, Z. K., Kortan, A. R., Hong, M., Kwo, J., Hsu, C.-H. (2008) Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection. Applied Physics Letters, 92 (6). 61914pp. doi:10.1063/1.2883939
Chang, Y. C., Chiu, H. C., Lee, Y. J., Huang, M. L., Lee, K. Y., Hong, M., Chiu, Y. N., Kwo, J., Wang, Y. H. (2007) Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN. Applied Physics Letters, 90 (23). 232904pp. doi:10.1063/1.2746057
Huang, Y. L., Chang, P., Yang, Z. K., Lee, Y. J., Lee, H. Y., Liu, H. J., Kwo, J., Mannaerts, J. P., Hong, M. (2005) Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface. Applied Physics Letters, 86 (19). 191905pp. doi:10.1063/1.1923172
Lee, K. Y., Lee, Y. J., Chang, P., Huang, M. L., Chang, Y. C., Hong, M., Kwo, J. (2008) Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As. Applied Physics Letters, 92 (25). 252908pp. doi:10.1063/1.2952826
Wu, T. S., Chen, Y. C., Shiu, Y. F., Peng, H. J., Chang, S. L., Lee, H. Y., Chu, P. P., Hsu, C. W., Chou, L. J., Pao, C. W., Lee, J. F., Kwo, J., Hong, M., Soo, Y. L. (2012) Correlation between oxygen vacancies and magnetism in Mn-doped Y2O3 nanocrystals investigated by defect engineering techniques. Applied Physics Letters, 101 (2). 22408pp. doi:10.1063/1.4732094
Wu, C. N., Huang, S. Y., Lee, W. C., Chang, Y. H., Wu, T. S., Soo, Y. L., Hong, M., Kwo, J. (2012) Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films. Applied Physics Letters, 101 (16). 162403pp. doi:10.1063/1.4760284
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.5 11:01:14
Go to top of page