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Moram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., Humphreys, C. J. (2007) Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, 91 (15). 152101pp. doi:10.1063/1.2794009

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Reference TypeJournal (article/letter/editorial)
TitleDislocation reduction in gallium nitride films using scandium nitride interlayers
JournalApplied Physics Letters
AuthorsMoram, M. A.Author
Zhang, Y.Author
Kappers, M. J.Author
Barber, Z. H.Author
Humphreys, C. J.Author
Year2007 (October 8)Volume91
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2794009Search in ResearchGate
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Mindat Ref. ID8556375Long-form Identifiermindat:1:5:8556375:9
GUID0
Full ReferenceMoram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., Humphreys, C. J. (2007) Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, 91 (15). 152101pp. doi:10.1063/1.2794009
Plain TextMoram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., Humphreys, C. J. (2007) Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, 91 (15). 152101pp. doi:10.1063/1.2794009
In(2007, October) Applied Physics Letters Vol. 91 (15) AIP Publishing

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Moram, M. A., Kappers, M. J., Zhang, Y., Barber, Z. H., Humphreys, C. J. (2008) Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers. physica status solidi (a), 205 (5). 1064-1066 doi:10.1002/pssa.200778608
Moram, M. A., Kappers, M. J., Humphreys, C. J. (2010) Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers. physica status solidi (c), 7 (7). 1778-1780 doi:10.1002/pssc.200983494
Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., Humphreys, C. J. (2009) Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, 105 (11). 113501pp. doi:10.1063/1.3129307
Kappers, M.J., Moram, M.A., Zhang, Y., Vickers, M.E., Barber, Z.H., Humphreys, C.J. (2007) Interlayer methods for reducing the dislocation density in gallium nitride. Physica B: Condensed Matter, 401. 296-301 doi:10.1016/j.physb.2007.08.170
Moram, M. A., Vickers, M. E., Kappers, M. J., Humphreys, C. J. (2008) The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Journal of Applied Physics, 103 (9). 93528pp. doi:10.1063/1.2913514
Moram, M. A., Sadler, T. C., Häberlen, M., Kappers, M. J., Humphreys, C. J. (2010) Dislocation movement in GaN films. Applied Physics Letters, 97 (26). 261907pp. doi:10.1063/1.3532965
Johnston, C. F., Moram, M. A., Kappers, M. J., Humphreys, C. J. (2009) Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Applied Physics Letters, 94 (16). 161109pp. doi:10.1063/1.3119321
Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., Chalker, P. R. (2006) Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Journal of Applied Physics, 100 (2). 23514pp. doi:10.1063/1.2217106
Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J. (2009) Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth, 311 (12). 3239-3242 doi:10.1016/j.jcrysgro.2009.03.029
Moss, D. M., Akimov, A. V., Kent, A. J., Glavin, B. A., Kappers, M. J., Hollander, J. L., Moram, M. A., Humphreys, C. J. (2009) Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters, 94 (1). 11909pp. doi:10.1063/1.3056653
Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J. (2007) Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Journal of Crystal Growth, 308 (2). 302-308 doi:10.1016/j.jcrysgro.2007.09.009
 
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