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Kappers, M.J., Moram, M.A., Zhang, Y., Vickers, M.E., Barber, Z.H., Humphreys, C.J. (2007) Interlayer methods for reducing the dislocation density in gallium nitride. Physica B: Condensed Matter, 401. 296-301 doi:10.1016/j.physb.2007.08.170

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Reference TypeJournal (article/letter/editorial)
TitleInterlayer methods for reducing the dislocation density in gallium nitride
JournalPhysica B: Condensed Matter
AuthorsKappers, M.J.Author
Moram, M.A.Author
Zhang, Y.Author
Vickers, M.E.Author
Barber, Z.H.Author
Humphreys, C.J.Author
Year2007 (December)Volume401
PublisherElsevier BV
DOIdoi:10.1016/j.physb.2007.08.170Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4064797Long-form Identifiermindat:1:5:4064797:1
GUID0
Full ReferenceKappers, M.J., Moram, M.A., Zhang, Y., Vickers, M.E., Barber, Z.H., Humphreys, C.J. (2007) Interlayer methods for reducing the dislocation density in gallium nitride. Physica B: Condensed Matter, 401. 296-301 doi:10.1016/j.physb.2007.08.170
Plain TextKappers, M.J., Moram, M.A., Zhang, Y., Vickers, M.E., Barber, Z.H., Humphreys, C.J. (2007) Interlayer methods for reducing the dislocation density in gallium nitride. Physica B: Condensed Matter, 401. 296-301 doi:10.1016/j.physb.2007.08.170
In(2007) Physica B: Condensed Matter Vol. 401. Elsevier BV

See Also

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Moram, M.A., Kappers, M.J., Barber, Z.H., Humphreys, C.J. (2007) Growth of low dislocation density GaN using transition metal nitride masking layers. Journal of Crystal Growth, 298. 268-271 doi:10.1016/j.jcrysgro.2006.10.027
Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J. (2009) Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Physica B: Condensed Matter, 404 (16). 2189-2191 doi:10.1016/j.physb.2009.04.010
Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J. (2007) Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Journal of Crystal Growth, 308 (2). 302-308 doi:10.1016/j.jcrysgro.2007.09.009
Moram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., Humphreys, C. J. (2007) Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, 91 (15). 152101pp. doi:10.1063/1.2794009
Hollander, J.L., Kappers, M.J., Humphreys, C.J. (2007) Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations. Physica B: Condensed Matter, 401. 307-310 doi:10.1016/j.physb.2007.08.174
Emiroglu, D., Evans-Freeman, J.H., Kappers, M.J., McAleese, C., Humphreys, C.J. (2007) Deep electronic states associated with a metastable hole trap in n-type GaN. Physica B: Condensed Matter, 401. 311-314 doi:10.1016/j.physb.2007.08.175
Moram, M. A., Kappers, M. J., Zhang, Y., Barber, Z. H., Humphreys, C. J. (2008) Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers. physica status solidi (a), 205 (5). 1064-1066 doi:10.1002/pssa.200778608
Moram, M.A., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J. (2006) Microstructure of epitaxial scandium nitride films grown on silicon. Applied Surface Science, 252. 8385-8387 doi:10.1016/j.apsusc.2005.11.069
Kappers, M.J., Datta, R., Oliver, R.A., Rayment, F.D.G., Vickers, M.E., Humphreys, C.J. (2007) Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers. Journal of Crystal Growth, 300 (1). 70-74 doi:10.1016/j.jcrysgro.2006.10.205
Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J. (2009) Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth, 311 (12). 3239-3242 doi:10.1016/j.jcrysgro.2009.03.029
Kappers, M.J., Moram, M.A., Sridhara Rao, D.V., McAleese, C., Humphreys, C.J. (2010) Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire. Journal of Crystal Growth, 312 (3). 363-367 doi:10.1016/j.jcrysgro.2009.11.014
 
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