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Maikap, S., Wang, T.-Y., Tzeng, P.-J., Lin, C.-H., Tien, T. C., Lee, L. S., Yang, J.-R., Tsai, M.-J. (2007) Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers. Applied Physics Letters, 90 (26). 262901pp. doi:10.1063/1.2751579

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Reference TypeJournal (article/letter/editorial)
TitleBand offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers
JournalApplied Physics Letters
AuthorsMaikap, S.Author
Wang, T.-Y.Author
Tzeng, P.-J.Author
Lin, C.-H.Author
Tien, T. C.Author
Lee, L. S.Author
Yang, J.-R.Author
Tsai, M.-J.Author
Year2007 (June 25)Volume90
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.2751579Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554766Long-form Identifiermindat:1:5:8554766:3
GUID0
Full ReferenceMaikap, S., Wang, T.-Y., Tzeng, P.-J., Lin, C.-H., Tien, T. C., Lee, L. S., Yang, J.-R., Tsai, M.-J. (2007) Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers. Applied Physics Letters, 90 (26). 262901pp. doi:10.1063/1.2751579
Plain TextMaikap, S., Wang, T.-Y., Tzeng, P.-J., Lin, C.-H., Tien, T. C., Lee, L. S., Yang, J.-R., Tsai, M.-J. (2007) Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers. Applied Physics Letters, 90 (26). 262901pp. doi:10.1063/1.2751579
In(2007, June) Applied Physics Letters Vol. 90 (26) AIP Publishing

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