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Yang, F. M., Chang, T. C., Liu, P. T., Yeh, P. H., Yu, Y. C., Lin, J. Y., Sze, S. M., Lou, J. C. (2007) Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide. Applied Physics Letters, 90 (13). 132102pp. doi:10.1063/1.2716845

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Reference TypeJournal (article/letter/editorial)
TitleMemory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
JournalApplied Physics Letters
AuthorsYang, F. M.Author
Chang, T. C.Author
Liu, P. T.Author
Yeh, P. H.Author
Yu, Y. C.Author
Lin, J. Y.Author
Sze, S. M.Author
Lou, J. C.Author
Year2007 (March 26)Volume90
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.2716845Search in ResearchGate
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Mindat Ref. ID8553107Long-form Identifiermindat:1:5:8553107:9
GUID0
Full ReferenceYang, F. M., Chang, T. C., Liu, P. T., Yeh, P. H., Yu, Y. C., Lin, J. Y., Sze, S. M., Lou, J. C. (2007) Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide. Applied Physics Letters, 90 (13). 132102pp. doi:10.1063/1.2716845
Plain TextYang, F. M., Chang, T. C., Liu, P. T., Yeh, P. H., Yu, Y. C., Lin, J. Y., Sze, S. M., Lou, J. C. (2007) Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide. Applied Physics Letters, 90 (13). 132102pp. doi:10.1063/1.2716845
In(2007, March) Applied Physics Letters Vol. 90 (13) AIP Publishing

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