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Li, W. P., Wang, X. W., Liu, Y. X., Shim, S. I., Ma, T. P. (2007) Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4. Applied Physics Letters, 90 (19). 193503pp. doi:10.1063/1.2737374

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Reference TypeJournal (article/letter/editorial)
TitleDemonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4
JournalApplied Physics Letters
AuthorsLi, W. P.Author
Wang, X. W.Author
Liu, Y. X.Author
Shim, S. I.Author
Ma, T. P.Author
Year2007 (May 7)Volume90
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.2737374Search in ResearchGate
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Mindat Ref. ID8553937Long-form Identifiermindat:1:5:8553937:2
GUID0
Full ReferenceLi, W. P., Wang, X. W., Liu, Y. X., Shim, S. I., Ma, T. P. (2007) Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4. Applied Physics Letters, 90 (19). 193503pp. doi:10.1063/1.2737374
Plain TextLi, W. P., Wang, X. W., Liu, Y. X., Shim, S. I., Ma, T. P. (2007) Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4. Applied Physics Letters, 90 (19). 193503pp. doi:10.1063/1.2737374
In(2007, May) Applied Physics Letters Vol. 90 (19) AIP Publishing

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