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Xu, J. P., Ji, F., Li, C. X., Lai, P. T., Guan, J. G., Liu, Y. R. (2007) Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer. Applied Physics Letters, 91 (15). 152905pp. doi:10.1063/1.2798248

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Reference TypeJournal (article/letter/editorial)
TitleImproved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
JournalApplied Physics Letters
AuthorsXu, J. P.Author
Ji, F.Author
Li, C. X.Author
Lai, P. T.Author
Guan, J. G.Author
Liu, Y. R.Author
Year2007 (October 8)Volume91
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2798248Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8556399Long-form Identifiermindat:1:5:8556399:9
GUID0
Full ReferenceXu, J. P., Ji, F., Li, C. X., Lai, P. T., Guan, J. G., Liu, Y. R. (2007) Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer. Applied Physics Letters, 91 (15). 152905pp. doi:10.1063/1.2798248
Plain TextXu, J. P., Ji, F., Li, C. X., Lai, P. T., Guan, J. G., Liu, Y. R. (2007) Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer. Applied Physics Letters, 91 (15). 152905pp. doi:10.1063/1.2798248
In(2007, October) Applied Physics Letters Vol. 91 (15) AIP Publishing

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