Parikh, A., Yarbrough, W., Mason, M., Sridhar, S., Chidambaram, P. R., Cai, Z. (2007) Characterization of structure and morphology of an advanced p-channel field effect transistor under uniaxial stress by synchrotron x-ray diffraction. Applied Physics Letters, 90 (17). 172117pp. doi:10.1063/1.2734480

See Also

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	Parikh, A., Cai, Z. (2011) Architecture of source-drain cavity of a p-channel field effect transistor for embedding with epitaxial SiGe for enhanced performance. Journal of Applied Physics, 110 (6). 64301pp. doi:10.1063/1.3638051
	Kandasamy, S., Wlodarski, W., Holland, A., Nakagomi, S., Kokubun, Y. (2007) Electrical characterization and hydrogen gas sensing properties of a n-ZnO∕p-SiC Pt-gate metal semiconductor field effect transistor. Applied Physics Letters, 90 (6). 64103pp. doi:10.1063/1.2450668
	Kim, D. M. (2000) Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor. Applied Physics Letters, 77 (24). 4043-4045 doi:10.1063/1.1332404
	Balke, Benjamin, Wurmehl, Sabine, Fecher, Gerhard H., Felser, Claudia, Alves, Maria C. M., Bernardi, Fabiano, Morais, Jonder (2007) Structural characterization of the Co2FeZ (Z=Al, Si, Ga, and Ge) Heusler compounds by x-ray diffraction and extended x-ray absorption fine structure spectroscopy. Applied Physics Letters, 90 (17). 172501pp. doi:10.1063/1.2731314
	Hsu, R. T., Hsu, W. C., Kao, M. J., Wang, J. S. (1995) Characteristics of a δ ‐doped GaAs/InGaAs p‐channel heterostructure field‐effect transistor. Applied Physics Letters, 66 (21). 2864-2866 doi:10.1063/1.113455
	Domagala, J. Z., Czyzak, A., Zytkiewicz, Z. R. (2007) Imaging of strain in laterally overgrown GaAs layers by spatially resolved x-ray diffraction. Applied Physics Letters, 90 (24). 241904pp. doi:10.1063/1.2748304
	Liu, Y., Rang, Z. L., Fung, A. K., Cai, C., Ruden, P. P., Nathan, M. I., Shtrikman, H. (2001) Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction. Applied Physics Letters, 79 (27). 4586-4588 doi:10.1063/1.1427753
	Semenov, Y. G., Kim, K. W., Zavada, J. M. (2007) Spin field effect transistor with a graphene channel. Applied Physics Letters, 91 (15). 153105pp. doi:10.1063/1.2798596
	Zhao, C. Z., Zahid, M. B., Zhang, J. F., Groeseneken, G., Degraeve, R., De Gendt, S. (2007) Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics. Applied Physics Letters, 90 (14). 143502pp. doi:10.1063/1.2719022
	Shifren, L., Wang, X., Matagne, P., Obradovic, B., Auth, C., Cea, S., Ghani, T., He, J., Hoffman, T., Kotlyar, R., Ma, Z., Mistry, K., Nagisetty, R., Shaheed, R., Stettler, M., Weber, C., Giles, M. D. (2004) Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress. Applied Physics Letters, 85 (25). 6188-6190 doi:10.1063/1.1841452
	Cohen, G. M., Rooks, M. J., Chu, J. O., Laux, S. E., Solomon, P. M., Ott, J. A., Miller, R. J., Haensch, W. (2007) Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain. Applied Physics Letters, 90 (23). 233110pp. doi:10.1063/1.2746946