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Domagala, J. Z., Czyzak, A., Zytkiewicz, Z. R. (2007) Imaging of strain in laterally overgrown GaAs layers by spatially resolved x-ray diffraction. Applied Physics Letters, 90 (24). 241904pp. doi:10.1063/1.2748304

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Reference TypeJournal (article/letter/editorial)
TitleImaging of strain in laterally overgrown GaAs layers by spatially resolved x-ray diffraction
JournalApplied Physics Letters
AuthorsDomagala, J. Z.Author
Czyzak, A.Author
Zytkiewicz, Z. R.Author
Year2007 (June 11)Volume90
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2748304Search in ResearchGate
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Mindat Ref. ID8554577Long-form Identifiermindat:1:5:8554577:1
GUID0
Full ReferenceDomagala, J. Z., Czyzak, A., Zytkiewicz, Z. R. (2007) Imaging of strain in laterally overgrown GaAs layers by spatially resolved x-ray diffraction. Applied Physics Letters, 90 (24). 241904pp. doi:10.1063/1.2748304
Plain TextDomagala, J. Z., Czyzak, A., Zytkiewicz, Z. R. (2007) Imaging of strain in laterally overgrown GaAs layers by spatially resolved x-ray diffraction. Applied Physics Letters, 90 (24). 241904pp. doi:10.1063/1.2748304
In(2007, June) Applied Physics Letters Vol. 90 (24) AIP Publishing

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Czyzak, A., Domagala, J.Z., Zytkiewicz, Z.R. (2008) X-ray diffraction micro-imaging of strain in laterally overgrown GaAs layers. Part II: analysis of multi-stripe and fully overgrown layers. Applied Physics A, 91. 609-614 doi:10.1007/s00339-008-4510-6
Wierzbicka, A., Domagala, J. Z., Zytkiewicz, Z. R. (2009) Spatially resolved x-ray diffraction study of GaSb layers grown laterally on SiO2-masked GaAs substrates. Journal of Applied Physics, 106 (4). 43521pp. doi:10.1063/1.3194319
Czyzak, A., Domagala, J.Z., Maciejewski, G., Zytkiewicz, Z.R. (2008) X-ray diffraction micro-imaging of strain in laterally overgrown GaAs layers. Part I: analysis of a single GaAs stripe. Applied Physics A, 91. 601-607 doi:10.1007/s00339-008-4511-5
Rantamäki, R., Tuomi, T., Zytkiewicz, Z. R., Domagala, J., McNally, P. J., Danilewsky, A. N. (1999) Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 86 (8). 4298-4303 doi:10.1063/1.371360
Zytkiewicz, Z. R., Domagala, J. Z., Dobosz, D., Dobaczewski, L., Rocher, A., Clement, C., Crestou, J. (2007) Tilt and dislocations in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 101 (1). 13508pp. doi:10.1063/1.2405234
Wierzbicka, A., Domagala, J. Z., Sarzynski, M., Zytkiewicz, Z. R. (2009) Spatially resolved X‐ray diffraction as a tool for strain analysis in laterally modulated epitaxial structures. Crystal Research and Technology, 44 (10) 1089-1094 doi:10.1002/crat.200900473
Zytkiewicz, Z. R., Domagała, J., Dobosz, D. (2001) Control of adhesion to the mask of epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 90 (12). 6140-6144 doi:10.1063/1.1416851
Zytkiewicz, Z. R., Domagala, J. (1999) Thermal strain in GaAs layers grown by epitaxial lateral overgrowth on Si substrates. Applied Physics Letters, 75 (18). 2749-2751 doi:10.1063/1.125137
Zytkiewicz, Z. R., Domagala, J., Dobosz, D., Bak-Misiuk, J. (1999) Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth. Journal of Applied Physics, 86 (4). 1965-1969 doi:10.1063/1.370994
Domagala, J.Z., Czyzak, A., Zytkiewicz, Z.R. (2008) Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures. Acta Physica Polonica A, 114 (5). 1101-1107 doi:10.12693/aphyspola.114.1101
Zytkiewicz, Z. R., Domagala, J., Dobosz, D., Bak-Misiuk, J. (1998) Microscopic bending of GaAs layers grown by epitaxial lateral overgrowth. Journal of Applied Physics, 84 (12). 6937-6939 doi:10.1063/1.368995
 
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