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Na, Jong H., Kitamura, M., Lee, D., Arakawa, Y. (2007) High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics. Applied Physics Letters, 90 (16). 163514pp. doi:10.1063/1.2730586

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Reference TypeJournal (article/letter/editorial)
TitleHigh performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics
JournalApplied Physics Letters
AuthorsNa, Jong H.Author
Kitamura, M.Author
Lee, D.Author
Arakawa, Y.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2730586Search in ResearchGate
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Mindat Ref. ID8553570Long-form Identifiermindat:1:5:8553570:1
GUID0
Full ReferenceNa, Jong H., Kitamura, M., Lee, D., Arakawa, Y. (2007) High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics. Applied Physics Letters, 90 (16). 163514pp. doi:10.1063/1.2730586
Plain TextNa, Jong H., Kitamura, M., Lee, D., Arakawa, Y. (2007) High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics. Applied Physics Letters, 90 (16). 163514pp. doi:10.1063/1.2730586
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Kitamura, M., Arakawa, Y. (2006) High-performance pentacene thin-film transistors with high dielectric constant gate insulators. Applied Physics Letters, 89 (22). 223525pp. doi:10.1063/1.2400399
Na, Jong H., Kitamura, M., Arakawa, Y. (2007) High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate. Applied Physics Letters, 91 (19). 193501pp. doi:10.1063/1.2807843
Na, Jong H., Kitamura, M., Arakawa, Y. (2008) Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors. Applied Physics Letters, 93 (21). 213505pp. doi:10.1063/1.3039779
Kitamura, M., Imada, T., Arakawa, Y. (2003) Organic light-emitting diodes driven by pentacene-based thin-film transistors. Applied Physics Letters, 83 (16). 3410-3412 doi:10.1063/1.1620676
Seol, Y. G., Noh, H. Y., Lee, S. S., Ahn, J. H., Lee, N.-E. (2008) Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors. Applied Physics Letters, 93 (1). 13305pp. doi:10.1063/1.2956407
Na, Jong H., Kitamura, M., Arakawa, Y. (2008) High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes. Applied Physics Letters, 93 (6). 63501pp. doi:10.1063/1.2969780
Kitamura, Masatoshi, Aomori, Shigeru, Na, Jong Ho, Arakawa, Yasuhiko (2008) Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities. Applied Physics Letters, 93 (3). 33313pp. doi:10.1063/1.2959732
Kumaki, Daisuke, Yahiro, Masayuki, Inoue, Youji, Tokito, Shizuo (2007) Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane. Applied Physics Letters, 90 (13). 133511pp. doi:10.1063/1.2717552
Jung, Cecile, Maliakal, Ashok, Sidorenko, Alexander, Siegrist, Theo (2007) Pentacene-based thin film transistors with titanium oxide-polystyrene/polystyrene insulator blends: High mobility on high K dielectric films. Applied Physics Letters, 90 (6). 62111pp. doi:10.1063/1.2450660
Kim, Chang Su, Jo, Sung Jin, Kim, Jong Bok, Ryu, Seung Yoon, Noh, Joo Hyon, Baik, Hong Koo, Lee, Se Jong, Kim, Youn Sang (2007) Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors. Applied Physics Letters, 91 (6). 63503pp. doi:10.1063/1.2767779
Hwang, D. K., Lee, Kimoon, Kim, Jae Hoon, Im, Seongil, Kim, Chang Su, Baik, Hong Koo, Park, Ji Hoon, Kim, Eugene (2006) Low-voltage high-mobility pentacene thin-film transistors with polymer/high-k oxide double gate dielectrics. Applied Physics Letters, 88 (24). 243513pp. doi:10.1063/1.2206555
 
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