Kumaki, Daisuke, Yahiro, Masayuki, Inoue, Youji, Tokito, Shizuo (2007) Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane. Applied Physics Letters, 90 (13). 133511pp. doi:10.1063/1.2717552
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane | ||
| Journal | Applied Physics Letters | ||
| Authors | Kumaki, Daisuke | Author | |
| Yahiro, Masayuki | Author | ||
| Inoue, Youji | Author | ||
| Tokito, Shizuo | Author | ||
| Year | 2007 (March 26) | Volume | 90 |
| Issue | 13 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2717552Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8553153 | Long-form Identifier | mindat:1:5:8553153:8 |
| GUID | 0 | ||
| Full Reference | Kumaki, Daisuke, Yahiro, Masayuki, Inoue, Youji, Tokito, Shizuo (2007) Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane. Applied Physics Letters, 90 (13). 133511pp. doi:10.1063/1.2717552 | ||
| Plain Text | Kumaki, Daisuke, Yahiro, Masayuki, Inoue, Youji, Tokito, Shizuo (2007) Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane. Applied Physics Letters, 90 (13). 133511pp. doi:10.1063/1.2717552 | ||
| In | (2007, March) Applied Physics Letters Vol. 90 (13) AIP Publishing | ||
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