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Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma. Applied Physics Letters, 90 (15). 151904pp. doi:10.1063/1.2721366

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Reference TypeJournal (article/letter/editorial)
TitleSignificant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma
JournalApplied Physics Letters
AuthorsKakiuchi, HiroakiAuthor
Ohmi, HiromasaAuthor
Harada, MakotoAuthor
Watanabe, HeijiAuthor
Yasutake, KiyoshiAuthor
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2721366Search in ResearchGate
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Mindat Ref. ID8553369Long-form Identifiermindat:1:5:8553369:7
GUID0
Full ReferenceKakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma. Applied Physics Letters, 90 (15). 151904pp. doi:10.1063/1.2721366
Plain TextKakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma. Applied Physics Letters, 90 (15). 151904pp. doi:10.1063/1.2721366
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

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Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma. Applied Physics Letters, 90 (9). 91909pp. doi:10.1063/1.2710190
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2007) Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process. Applied Physics Letters, 91 (16). 161908pp. doi:10.1063/1.2801516
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Harada, Makoto, Watanabe, Heiji, Yasutake, Kiyoshi (2008) SiO2Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power. Japanese Journal of Applied Physics, 47 (3) 1884-1888 doi:10.1143/jjap.47.1884
Yasutake, Kiyoshi, Tawara, Naotaka, Ohmi, Hiromasa, Terai, Yoshikazu, Kakiuchi, Hiroaki, Watanabe, Heiji, Fujiwara, Yasufumi (2007) Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics, 46 (4) 2510-2515 doi:10.1143/jjap.46.2510
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Ouchi, Kentaro, Tabuchi, Keita, Yasutake, Kiyoshi (2009) Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma. Journal of Applied Physics, 106 (1). 13521pp. doi:10.1063/1.3159887
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Nishijima, Kenichi, Watanabe, Heiji, Yasutake, Kiyoshi (2006) Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture. Japanese Journal of Applied Physics, 45 (10) 8488-8493 doi:10.1143/jjap.45.8488
Yasutake, Kiyoshi, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Wakamiya, Takuya, Watanabe, Heiji (2006) Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode. Japanese Journal of Applied Physics, 45 (4) 3592-3597 doi:10.1143/jjap.45.3592
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Tawara, Naotaka, Wakamiya, Takuya, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi (2006) Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode. Japanese Journal of Applied Physics, 45 (10) 8424-8429 doi:10.1143/jjap.45.8424
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hamaoka, Yoshinori, Yasutake, Kiyoshi (2007) Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma. Journal of Applied Physics, 102 (2). 23302pp. doi:10.1063/1.2753675
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Inudzuka, Ryohei, Ouchi, Kentaro, Yasutake, Kiyoshi (2008) Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode. Journal of Applied Physics, 104 (5). 53522pp. doi:10.1063/1.2975978
Ohmi, Hiromasa, Sato, Jumpei, Hirano, Tatsuya, Kubota, Yusuke, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma. Applied Physics Letters, 109 (21). 211603pp. doi:10.1063/1.4967382
 
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