| Reference Type | Journal (article/letter/editorial) |
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| Title | Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1−xNx quantum dots |
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| Journal | Applied Physics Letters |
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| Authors | Zhang, X. W. | Author |
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| Fan, W. J. | Author |
| Li, S. S. | Author |
| Xia, J. B. | Author |
| Year | 2007 (April 9) | Volume | 90 |
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| Issue | 15 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.2721130Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 8553347 | Long-form Identifier | mindat:1:5:8553347:5 |
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|
| GUID | 0 |
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| Full Reference | Zhang, X. W., Fan, W. J., Li, S. S., Xia, J. B. (2007) Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1−xNx quantum dots. Applied Physics Letters, 90 (15). 153103pp. doi:10.1063/1.2721130 |
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| Plain Text | Zhang, X. W., Fan, W. J., Li, S. S., Xia, J. B. (2007) Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1−xNx quantum dots. Applied Physics Letters, 90 (15). 153103pp. doi:10.1063/1.2721130 |
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| In | (2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing |
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