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Fejfar, A, Stuchlík, J., Mates, T., Ledinský, M., Honda, S., Kočka, J. (2005) Erratum: “Patterning of hydrogenated microcrystalline silicon growth by magnetic field” [Appl. Phys. Lett. 87, 011901 (2005)]. Applied Physics Letters, 87 (21). 219901pp. doi:10.1063/1.2135206

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Patterning of hydrogenated microcrystalline silicon growth by magnetic field” [Appl. Phys. Lett. 87, 011901 (2005)]
JournalApplied Physics Letters
AuthorsFejfar, AAuthor
Stuchlík, J.Author
Mates, T.Author
Ledinský, M.Author
Honda, S.Author
Kočka, J.Author
Year2005 (November 21)Volume87
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.2135206Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8545161Long-form Identifiermindat:1:5:8545161:2
GUID0
Full ReferenceFejfar, A, Stuchlík, J., Mates, T., Ledinský, M., Honda, S., Kočka, J. (2005) Erratum: “Patterning of hydrogenated microcrystalline silicon growth by magnetic field” [Appl. Phys. Lett. 87, 011901 (2005)]. Applied Physics Letters, 87 (21). 219901pp. doi:10.1063/1.2135206
Plain TextFejfar, A, Stuchlík, J., Mates, T., Ledinský, M., Honda, S., Kočka, J. (2005) Erratum: “Patterning of hydrogenated microcrystalline silicon growth by magnetic field” [Appl. Phys. Lett. 87, 011901 (2005)]. Applied Physics Letters, 87 (21). 219901pp. doi:10.1063/1.2135206
In(2005, November) Applied Physics Letters Vol. 87 (21) AIP Publishing

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Fejfar, A., Stuchlík, J., Mates, T., Ledinský, M., Honda, S., Kočka, J. (2005) Patterning of hydrogenated microcrystalline silicon growth by magnetic field. Applied Physics Letters, 87 (1). 11901pp. doi:10.1063/1.1984102
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2006) Microcrystalline silicon prepared at magnetic field modified nucleation. Journal of Non-Crystalline Solids, 352 (9) 901-905 doi:10.1016/j.jnoncrysol.2005.11.071
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2006) Transport properties of microcrystalline silicon, prepared at high growth rate. Journal of Non-Crystalline Solids, 352 (9) 1097-1100 doi:10.1016/j.jnoncrysol.2005.10.043
Kočka, J., Mates, T., Ledinský, M., Stuchlík, J., Fejfar, A., Gunnarsson, K. (2007) Controlled growth of nanocrystalline silicon on permalloy micro-patterns. Applied Physics A, 88. 797-800 doi:10.1007/s00339-007-4087-5
Vetushka, A., Fejfar, A., Ledinský, M., Rezek, B., Stuchlík, J., Kočka, J. (2010) Comment on “Current routes in hydrogenated microcrystalline silicon”. Physical Review B, 81 (23) doi:10.1103/physrevb.81.237301
Ledinský, M., Fekete, L., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J. (2006) Characterization of mixed phase silicon by Raman spectroscopy. Journal of Non-Crystalline Solids, 352 (9) 1209-1212 doi:10.1016/j.jnoncrysol.2005.10.072
Vetushka, A., Ledinský, M., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J. (2008) Mapping of mechanical stress in silicon thin films on silicon cantilevers by Raman microspectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2235-2237 doi:10.1016/j.jnoncrysol.2007.09.072
Ledinský, M., Vetushka, A., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J., Štěpánek, J. (2008) Crystallinity of the mixed phase silicon thin films by Raman spectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2253-2257 doi:10.1016/j.jnoncrysol.2007.09.073
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2008) A simple quality factor for characterization of thin silicon films. Journal of Non-Crystalline Solids, 354 (19) 2227-2230 doi:10.1016/j.jnoncrysol.2007.09.078
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2008) Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses. Journal of Non-Crystalline Solids, 354 (19) 2451-2454 doi:10.1016/j.jnoncrysol.2007.09.079
Du, Guotong, Ma, Yan, Zhang, Yuantao, Yang, Tianpeng (2006) Erratum: “Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy” [Appl. Phys. Lett. 87, 213103 (2005)]. Applied Physics Letters, 89 (21). 219901pp. doi:10.1063/1.2396923
 
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