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Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2006) Transport properties of microcrystalline silicon, prepared at high growth rate. Journal of Non-Crystalline Solids, 352 (9) 1097-1100 doi:10.1016/j.jnoncrysol.2005.10.043

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Reference TypeJournal (article/letter/editorial)
TitleTransport properties of microcrystalline silicon, prepared at high growth rate
JournalJournal of Non-Crystalline Solids
AuthorsKočka, J.Author
Mates, T.Author
Ledinský, M.Author
Stuchlíková, H.Author
Stuchlík, J.Author
Fejfar, A.Author
Year2006 (June)Volume352
Issue9
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2005.10.043Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID644284Long-form Identifiermindat:1:5:644284:6
GUID0
Full ReferenceKočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2006) Transport properties of microcrystalline silicon, prepared at high growth rate. Journal of Non-Crystalline Solids, 352 (9) 1097-1100 doi:10.1016/j.jnoncrysol.2005.10.043
Plain TextKočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2006) Transport properties of microcrystalline silicon, prepared at high growth rate. Journal of Non-Crystalline Solids, 352 (9) 1097-1100 doi:10.1016/j.jnoncrysol.2005.10.043
In(2006, June) Journal of Non-Crystalline Solids Vol. 352 (9) Elsevier BV

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Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2006) Microcrystalline silicon prepared at magnetic field modified nucleation. Journal of Non-Crystalline Solids, 352 (9) 901-905 doi:10.1016/j.jnoncrysol.2005.11.071
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2008) Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses. Journal of Non-Crystalline Solids, 354 (19) 2451-2454 doi:10.1016/j.jnoncrysol.2007.09.079
Ledinský, M., Fekete, L., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J. (2006) Characterization of mixed phase silicon by Raman spectroscopy. Journal of Non-Crystalline Solids, 352 (9) 1209-1212 doi:10.1016/j.jnoncrysol.2005.10.072
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2008) A simple quality factor for characterization of thin silicon films. Journal of Non-Crystalline Solids, 354 (19) 2227-2230 doi:10.1016/j.jnoncrysol.2007.09.078
Ledinský, M., Vetushka, A., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J., Štěpánek, J. (2008) Crystallinity of the mixed phase silicon thin films by Raman spectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2253-2257 doi:10.1016/j.jnoncrysol.2007.09.073
Vetushka, A., Ledinský, M., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J. (2008) Mapping of mechanical stress in silicon thin films on silicon cantilevers by Raman microspectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2235-2237 doi:10.1016/j.jnoncrysol.2007.09.072
Fejfar, A., Stuchlík, J., Mates, T., Ledinský, M., Honda, S., Kočka, J. (2005) Patterning of hydrogenated microcrystalline silicon growth by magnetic field. Applied Physics Letters, 87 (1). 11901pp. doi:10.1063/1.1984102
Kočka, J., Mates, T., Fojtı́k, P., Ledinský, M., Luterová, K., Stuchlı́ková, H., Stuchlı́k, J., Pelant, I., Fejfar, A., Ito, M., Ro, K., Uyama, H. (2004) Formation of microcrystalline silicon at low temperatures and role of hydrogen. Journal of Non-Crystalline Solids, 338. 287-290 doi:10.1016/j.jnoncrysol.2004.02.086
Fejfar, A, Stuchlík, J., Mates, T., Ledinský, M., Honda, S., Kočka, J. (2005) Erratum: “Patterning of hydrogenated microcrystalline silicon growth by magnetic field” [Appl. Phys. Lett. 87, 011901 (2005)]. Applied Physics Letters, 87 (21). 219901pp. doi:10.1063/1.2135206
Rezek, B., Šípek, E., Ledinský, M., Krejza, P., Stuchlík, J., Fejfar, A., Kočka, J. (2008) Spatially localized current-induced crystallization of amorphous silicon films. Journal of Non-Crystalline Solids, 354 (19) 2305-2309 doi:10.1016/j.jnoncrysol.2007.10.045
Fejfar, A., Mates, T., Čertı́k, O., Rezek, B., Stuchlı́k, J., Pelant, I., Kočka, J. (2004) Model of electronic transport in microcrystalline silicon and its use for prediction of device performance. Journal of Non-Crystalline Solids, 338. 303-309 doi:10.1016/j.jnoncrysol.2004.02.063
 
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