Shastin, V. N., Zhukavin, R. Kh., Orlova, E. E., Pavlov, S. G., Rümmeli, M. H., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., Riemann, H., Bradley, I. V., van der Meer, A. F. G. (2002) Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80 (19). 3512-3514 doi:10.1063/1.1476955

See Also

These are possibly similar items as determined by title/reference text matching only.

	Pavlov, S. G., Hübers, H.-W., Rümmeli, M. H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N., Riemann, H. (2002) Far-infrared stimulated emission from optically excited bismuth donors in silicon. Applied Physics Letters, 80 (25). 4717-4719 doi:10.1063/1.1489080
	Pavlov, S. G., Böttger, U., Hovenier, J. N., Abrosimov, N. V., Riemann, H., Zhukavin, R. Kh., Shastin, V. N., Redlich, B., van der Meer, A. F. G., Hübers, H.-W. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94 (17). 171112pp. doi:10.1063/1.3119662
	Zhukavin, R. Kh., Shastin, V. N., Pavlov, S. G., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., van der Meer, A. F. G. (2007) Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics, 102 (9). 93104pp. doi:10.1063/1.2804756
	Hübers, H.-W., Pavlov, S. G., Riemann, H., Abrosimov, N. V., Zhukavin, R. Kh., Shastin, V. N. (2004) Stimulated terahertz emission from arsenic donors in silicon. Applied Physics Letters, 84 (18). 3600-3602 doi:10.1063/1.1737800
	Pavlov, S. G., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., Carder, D. A., Phillips, P. J., Redlich, B., Riemann, H., Zhukavin, R. Kh., Shastin, V. N. (2006) Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors. Physical Review Letters, 96 (3). doi:10.1103/physrevlett.96.037404
	Pavlov, S. G., Hübers, H.-W., Riemann, H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N. (2002) Terahertz optically pumped Si:Sb laser. Journal of Applied Physics, 92 (10). 5632-5634 doi:10.1063/1.1515377
	Pavlov, S. G., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N., Kirsanov, A. V., Hübers, H.-W., Auen, K., Riemann, H. (2000) Stimulated Emission from Donor Transitions in Silicon. Physical Review Letters, 84 (22). 5220-5223 doi:10.1103/physrevlett.84.5220
	Zhukavin, R. Kh., Tsyplenkov, V. V., Kovalevsky, K. A., Shastin, V. N., Pavlov, S. G., Böttger, U., Hübers, H.-W., Riemann, H., Abrosimov, N. V., Nötzel, N. (2007) Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon. Applied Physics Letters, 90 (5). 51101pp. doi:10.1063/1.2431568
	Pavlov, S. G., Hübers, H.-W., Böttger, U., Zhukavin, R. Kh., Shastin, V. N., Hovenier, J. N., Redlich, B., Abrosimov, N. V., Riemann, H. (2008) Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters, 92 (9). 91111pp. doi:10.1063/1.2890717
	Zhukavin, R. Kh., Pavlov, S. G., Kovalevsky, K. A., Hübers, H.-W., Riemann, H., Shastin, V. N. (2005) D− centers in intracenter Si:P lasers. Journal of Applied Physics, 97 (11). 113708pp. doi:10.1063/1.1922091
	Pavlov, S. G., Hübers, H.-W., Haas, P. M., Hovenier, J. N., Klaassen, T. O., Zhukavin, R. Kh., Shastin, V. N., Carder, D. A., Redlich, B. (2008) Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical Review B, 78 (16) doi:10.1103/physrevb.78.165201