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Pavlov, S. G., Hübers, H.-W., Riemann, H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N. (2002) Terahertz optically pumped Si:Sb laser. Journal of Applied Physics, 92 (10). 5632-5634 doi:10.1063/1.1515377

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Reference TypeJournal (article/letter/editorial)
TitleTerahertz optically pumped Si:Sb laser
JournalJournal of Applied Physics
AuthorsPavlov, S. G.Author
Hübers, H.-W.Author
Riemann, H.Author
Zhukavin, R. Kh.Author
Orlova, E. E.Author
Shastin, V. N.Author
Year2002 (November 15)Volume92
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1515377Search in ResearchGate
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Mindat Ref. ID5115345Long-form Identifiermindat:1:5:5115345:0
GUID0
Full ReferencePavlov, S. G., Hübers, H.-W., Riemann, H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N. (2002) Terahertz optically pumped Si:Sb laser. Journal of Applied Physics, 92 (10). 5632-5634 doi:10.1063/1.1515377
Plain TextPavlov, S. G., Hübers, H.-W., Riemann, H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N. (2002) Terahertz optically pumped Si:Sb laser. Journal of Applied Physics, 92 (10). 5632-5634 doi:10.1063/1.1515377
In(2002, November) Journal of Applied Physics Vol. 92 (10) AIP Publishing

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Pavlov, S. G., Hübers, H.-W., Orlova, E. E., Zhukavin, R. Kh., Riemann, H., Nakata, H., Shastin, V. N. (2003) Optically pumped terahertz semiconductor bulk lasers. physica status solidi (b), 235 (1). 126-134 doi:10.1002/pssb.200301532
Pavlov, S. G., Hübers, H.-W., Rümmeli, M. H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N., Riemann, H. (2002) Far-infrared stimulated emission from optically excited bismuth donors in silicon. Applied Physics Letters, 80 (25). 4717-4719 doi:10.1063/1.1489080
Hübers, H.-W., Auen, K., Pavlov, S. G., Orlova, E. E., Zhukavin, R. Kh., Shastin, V. N. (1999) Population inversion and far-infrared emission from optically pumped silicon. Applied Physics Letters, 74 (18). 2655-2657 doi:10.1063/1.123928
Pavlov, S. G., Hübers, H.-W., Böttger, U., Zhukavin, R. Kh., Shastin, V. N., Hovenier, J. N., Redlich, B., Abrosimov, N. V., Riemann, H. (2008) Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters, 92 (9). 91111pp. doi:10.1063/1.2890717
Pavlov, S. G., Böttger, U., Hübers, H.-W., Zhukavin, R. Kh., Kovalevsky, K. A., Tsyplenkov, V. V., Shastin, V. N., Abrosimov, N. V., Riemann, H. (2007) Low-threshold terahertz Si:As laser. Applied Physics Letters, 90 (14). 141109pp. doi:10.1063/1.2720271
Shastin, V. N., Zhukavin, R. Kh., Orlova, E. E., Pavlov, S. G., Rümmeli, M. H., Hübers, H.-W., Hovenier, J. N., Klaassen, T. O., Riemann, H., Bradley, I. V., van der Meer, A. F. G. (2002) Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80 (19). 3512-3514 doi:10.1063/1.1476955
Hübers, H.-W., Pavlov, S. G., Riemann, H., Abrosimov, N. V., Zhukavin, R. Kh., Shastin, V. N. (2004) Stimulated terahertz emission from arsenic donors in silicon. Applied Physics Letters, 84 (18). 3600-3602 doi:10.1063/1.1737800
Orlova, E. E., Kelsall, R. W., Deßmann, N., Pavlov, S. G., Hübers, H.-W., Zhukavin, R. Kh., Shastin, V. N. (2018) Cascade capture of charge carriers in highly doped semiconductors. Journal of Applied Physics, 124 (8). 85704pp. doi:10.1063/1.5035301
Pavlov, S. G., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N., Kirsanov, A. V., Hübers, H.-W., Auen, K., Riemann, H. (2000) Stimulated Emission from Donor Transitions in Silicon. Physical Review Letters, 84 (22). 5220-5223 doi:10.1103/physrevlett.84.5220
Zhukavin, R. Kh., Pavlov, S. G., Kovalevsky, K. A., Hübers, H.-W., Riemann, H., Shastin, V. N. (2005) D− centers in intracenter Si:P lasers. Journal of Applied Physics, 97 (11). 113708pp. doi:10.1063/1.1922091
Pavlov, S. G., Böttger, U., Hovenier, J. N., Abrosimov, N. V., Riemann, H., Zhukavin, R. Kh., Shastin, V. N., Redlich, B., van der Meer, A. F. G., Hübers, H.-W. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94 (17). 171112pp. doi:10.1063/1.3119662
 
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