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Gruverman, Alexei (1999) Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors. Applied Physics Letters, 75 (10). 1452-1454 doi:10.1063/1.124722

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Reference TypeJournal (article/letter/editorial)
TitleScaling effect on statistical behavior of switching parameters of ferroelectric capacitors
JournalApplied Physics Letters
AuthorsGruverman, AlexeiAuthor
Year1999 (September 6)Volume75
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.124722Search in ResearchGate
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Mindat Ref. ID8524403Long-form Identifiermindat:1:5:8524403:0
GUID0
Full ReferenceGruverman, Alexei (1999) Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors. Applied Physics Letters, 75 (10). 1452-1454 doi:10.1063/1.124722
Plain TextGruverman, Alexei (1999) Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors. Applied Physics Letters, 75 (10). 1452-1454 doi:10.1063/1.124722
In(1999, September) Applied Physics Letters Vol. 75 (10) AIP Publishing

See Also

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Wu, D., Kunishima, I., Roberts, S., Gruverman, A. (2009) Spatial variations in local switching parameters of ferroelectric random access memory capacitors. Applied Physics Letters, 95 (9). 92901pp. doi:10.1063/1.3192354
Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Cross, J. S., Tsukada, M. (2003) Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors. Applied Physics Letters, 82 (18). 3071-3073 doi:10.1063/1.1570942
Song, Jingfeng, Lu, Haidong, Gruverman, Alexei, Ducharme, S. (2014) Polarization imaging in ferroelectric polymer thin film capacitors by pyroelectric scanning microscopy. Applied Physics Letters, 104 (19). 192901pp. doi:10.1063/1.4875960
Wu, Aiying, Vilarinho, Paula M., Wu, Dong, Gruverman, Alexei (2008) Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors. Applied Physics Letters, 93 (26). 262906pp. doi:10.1063/1.3059566
Abuwasib, Mohammad, Lu, Haidong, Li, Tao, Buragohain, Pratyush, Lee, Hyungwoo, Eom, Chang-Beom, Gruverman, Alexei, Singisetti, Uttam (2016) Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions. Applied Physics Letters, 108 (15). 152904pp. doi:10.1063/1.4947020
Gruverman, A., Cross, J. S., Oates, W. S. (2008) Peculiar effect of mechanical stress on polarization stability in micrometer-scale ferroelectric capacitors. Applied Physics Letters, 93 (24). 242902pp. doi:10.1063/1.3046734
Alexe, M., Gruverman, A., Harnagea, C., Zakharov, N. D., Pignolet, A., Hesse, D., Scott, J. F. (1999) Switching properties of self-assembled ferroelectric memory cells. Applied Physics Letters, 75 (8). 1158-1160 doi:10.1063/1.124628
Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Tagantsev, A. K., Cross, J. S., Tsukada, M. (2003) Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors. Applied Physics Letters, 83 (4). 728-730 doi:10.1063/1.1593830
Gruverman, A., Wu, D., Scott, J. F. (2008) Piezoresponse Force Microscopy Studies of Switching Behavior of Ferroelectric Capacitors on a 100-ns Time Scale. Physical Review Letters, 100 (9). doi:10.1103/physrevlett.100.097601
Wu, D., Vrejoiu, I., Alexe, M., Gruverman, A. (2010) Anisotropy of domain growth in epitaxial ferroelectric capacitors. Applied Physics Letters, 96 (11). 112903pp. doi:10.1063/1.3366724
Gruverman, A., Rodriguez, B. J., Dehoff, C., Waldrep, J. D., Kingon, A. I., Nemanich, R. J., Cross, J. S. (2005) Direct studies of domain switching dynamics in thin film ferroelectric capacitors. Applied Physics Letters, 87 (8). 82902pp. doi:10.1063/1.2010605
 
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