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Monroy, E., Calle, F., Muñoz, E., Omnès, F., Gibart, P., Muñoz, J. A. (1998) AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity. Applied Physics Letters, 73 (15). 2146-2148 doi:10.1063/1.122405

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Reference TypeJournal (article/letter/editorial)
TitleAlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity
JournalApplied Physics Letters
AuthorsMonroy, E.Author
Calle, F.Author
Muñoz, E.Author
Omnès, F.Author
Gibart, P.Author
Muñoz, J. A.Author
Year1998 (October 12)Volume73
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.122405Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8522015Long-form Identifiermindat:1:5:8522015:5
GUID0
Full ReferenceMonroy, E., Calle, F., Muñoz, E., Omnès, F., Gibart, P., Muñoz, J. A. (1998) AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity. Applied Physics Letters, 73 (15). 2146-2148 doi:10.1063/1.122405
Plain TextMonroy, E., Calle, F., Muñoz, E., Omnès, F., Gibart, P., Muñoz, J. A. (1998) AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity. Applied Physics Letters, 73 (15). 2146-2148 doi:10.1063/1.122405
In(1998, October) Applied Physics Letters Vol. 73 (15) AIP Publishing

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Monroy, E., Calle, F., Pau, J. L., Sánchez, F. J., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P. (2000) Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes. Journal of Applied Physics, 88 (4). 2081-2091 doi:10.1063/1.1305838
Bouhdada, A., Hanzaz, M., Gibart, P., Omnès, F., Monroy, E., Muñoz, E. (2000) Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors. Journal of Applied Physics, 87 (12). 8286-8290 doi:10.1063/1.373539
Monroy, E., Calle, F., Muñoz, E., Omnès, F. (1999) AlGaN metal–semiconductor–metal photodiodes. Applied Physics Letters, 74 (22). 3401-3403 doi:10.1063/1.123358
Muñoz, E., Monroy, E., Calle, F., Omnès, F., Gibart, P. (2000) AlGaN Photodiodes For Monitoring Solar UV Radiation. Journal of Geophysical Research: Atmospheres, 105. 4865-4871 doi:10.1029/1999jd900939
Monroy, E., Vigué, F., Calle, F., Izpura, J. I., Muñoz, E., Faurie, J.-P. (2000) Time response analysis of ZnSe-based Schottky barrier photodetectors. Applied Physics Letters, 77 (17). 2761-2763 doi:10.1063/1.1320038
Monroy, E., Calle, F., Muñoz, E., Beaumont, B., Omnès, F., Gibart, P. (1999) Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN. physica status solidi (a), 176 (1). 141-145 doi:10.1002/(sici)1521-396x(199911)176:1<141::aid-pssa141>3.0.co;2-9
Vigué, F., Tournié, E., Faurie, J.-P., Monroy, E., Calle, F., Muñoz, E. (2001) Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes. Applied Physics Letters, 78 (26). 4190-4192 doi:10.1063/1.1381415
Hanzaz, M., Bouhdada, A., Monroy, E., Muñoz, E., Gibart, P., Omnès, F. (2000) Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors. The European Physical Journal Applied Physics, 11 (1). 29-34 doi:10.1051/epjap:2000137
Muñoz, E, Monroy, E, Pau, J L, Calle, F, Omnès, F, Gibart, P (2001) III nitrides and UV detection. Journal of Physics: Condensed Matter, 13 (32). 7115-7137 doi:10.1088/0953-8984/13/32/316
Monroy, E., Calle, F., Pau, J.L., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P. (2001) AlGaN-based UV photodetectors. Journal of Crystal Growth, 230 (3). 537-543 doi:10.1016/s0022-0248(01)01305-7
Muret, P., Philippe, A., Monroy, E., Muñoz, E., Beaumont, B., Omnès, F., Gibart, P. (2002) Properties of a hole trap inn-type hexagonal GaN. Journal of Applied Physics, 91 (5). 2998-3001 doi:10.1063/1.1433935
 
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