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Muret, P., Philippe, A., Monroy, E., Muñoz, E., Beaumont, B., Omnès, F., Gibart, P. (2002) Properties of a hole trap inn-type hexagonal GaN. Journal of Applied Physics, 91 (5). 2998-3001 doi:10.1063/1.1433935

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Reference TypeJournal (article/letter/editorial)
TitleProperties of a hole trap inn-type hexagonal GaN
JournalJournal of Applied Physics
AuthorsMuret, P.Author
Philippe, A.Author
Monroy, E.Author
Muñoz, E.Author
Beaumont, B.Author
Omnès, F.Author
Gibart, P.Author
Year2002 (March)Volume91
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1433935Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113867Long-form Identifiermindat:1:5:5113867:3
GUID0
Full ReferenceMuret, P., Philippe, A., Monroy, E., Muñoz, E., Beaumont, B., Omnès, F., Gibart, P. (2002) Properties of a hole trap inn-type hexagonal GaN. Journal of Applied Physics, 91 (5). 2998-3001 doi:10.1063/1.1433935
Plain TextMuret, P., Philippe, A., Monroy, E., Muñoz, E., Beaumont, B., Omnès, F., Gibart, P. (2002) Properties of a hole trap inn-type hexagonal GaN. Journal of Applied Physics, 91 (5). 2998-3001 doi:10.1063/1.1433935
In(2002, March) Journal of Applied Physics Vol. 91 (5) AIP Publishing

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Monroy, E., Calle, F., Pau, J. L., Sánchez, F. J., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P. (2000) Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes. Journal of Applied Physics, 88 (4). 2081-2091 doi:10.1063/1.1305838
Monroy, E., Calle, F., Muñoz, E., Beaumont, B., Omnès, F., Gibart, P. (1999) Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN. physica status solidi (a), 176 (1). 141-145 doi:10.1002/(sici)1521-396x(199911)176:1<141::aid-pssa141>3.0.co;2-9
Monroy, E., Calle, F., Pau, J.L., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P. (2001) AlGaN-based UV photodetectors. Journal of Crystal Growth, 230 (3). 537-543 doi:10.1016/s0022-0248(01)01305-7
Monroy, E., Calle, F., Muñoz, E., Omnès, F., Gibart, P., Muñoz, J. A. (1998) AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity. Applied Physics Letters, 73 (15). 2146-2148 doi:10.1063/1.122405
Muñoz, E., Monroy, E., Garrido, J. A., Izpura, I., Sánchez, F. J., Sánchez-Garcı́a, M. A., Calleja, E., Beaumont, B., Gibart, P. (1997) Photoconductor gain mechanisms in GaN ultraviolet detectors. Applied Physics Letters, 71 (7). 870-872 doi:10.1063/1.119673
Bouhdada, A., Hanzaz, M., Gibart, P., Omnès, F., Monroy, E., Muñoz, E. (2000) Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors. Journal of Applied Physics, 87 (12). 8286-8290 doi:10.1063/1.373539
Hanzaz, M., Bouhdada, A., Monroy, E., Muñoz, E., Gibart, P., Omnès, F. (2000) Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors. The European Physical Journal Applied Physics, 11 (1). 29-34 doi:10.1051/epjap:2000137
Muñoz, E., Monroy, E., Calle, F., Omnès, F., Gibart, P. (2000) AlGaN Photodiodes For Monitoring Solar UV Radiation. Journal of Geophysical Research: Atmospheres, 105. 4865-4871 doi:10.1029/1999jd900939
Pernot, J., Ulzhöfer, C., Muret, P., Beaumont, B., Gibart, P. (2005) Free energy and capture cross section of the E2 trap in n-type GaN. physica status solidi (a), 202 (4). 609-613 doi:10.1002/pssa.200460438
Muñoz, E, Monroy, E, Pau, J L, Calle, F, Omnès, F, Gibart, P (2001) III nitrides and UV detection. Journal of Physics: Condensed Matter, 13 (32). 7115-7137 doi:10.1088/0953-8984/13/32/316
Alvarez, A. L., Calle, F., Monroy, E., Pau, J. L., Sanchez-Garcia, M. A., Calleja, E., Muñoz, E., Omnes, F., Gibart, P., Hageman, P. R. (2002) Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy. Journal of Applied Physics, 92 (1). 223-226 doi:10.1063/1.1478788
 
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