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McPherson, J. W., Mogul, H. C. (1997) Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films. Applied Physics Letters, 71 (25). 3721-3723 doi:10.1063/1.120493

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Reference TypeJournal (article/letter/editorial)
TitleImpact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films
JournalApplied Physics Letters
AuthorsMcPherson, J. W.Author
Mogul, H. C.Author
Year1997 (December 22)Volume71
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.120493Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8520164Long-form Identifiermindat:1:5:8520164:6
GUID0
Full ReferenceMcPherson, J. W., Mogul, H. C. (1997) Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films. Applied Physics Letters, 71 (25). 3721-3723 doi:10.1063/1.120493
Plain TextMcPherson, J. W., Mogul, H. C. (1997) Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films. Applied Physics Letters, 71 (25). 3721-3723 doi:10.1063/1.120493
In(1997, December) Applied Physics Letters Vol. 71 (25) AIP Publishing

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McPherson, J. W., Reddy, V. K., Mogul, H. C. (1997) Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics. Applied Physics Letters, 71 (8). 1101-1103 doi:10.1063/1.119739
McPherson, J. W., Mogul, H. C. (1998) Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films. Journal of Applied Physics, 84 (3). 1513-1523 doi:10.1063/1.368217
McPherson, J., Kim, J-Y., Shanware, A., Mogul, H. (2003) Thermochemical description of dielectric breakdown in high dielectric constant materials. Applied Physics Letters, 82 (13). 2121-2123 doi:10.1063/1.1565180
McPherson, J. W. (2004) Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data. Journal of Applied Physics, 95 (12). 8101-8109 doi:10.1063/1.1728288
Jackson, J. C., Robinson, T., Oralkan, O., Dumin, D. J., Brown, G. A. (1997) Nonuniqueness of time-dependent-dielectric-breakdown distributions. Applied Physics Letters, 71 (25). 3682-3684 doi:10.1063/1.120480
McPherson, J. W., Khamankar, R. B., Shanware, A. (2000) Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics. Journal of Applied Physics, 88 (9). 5351-5359 doi:10.1063/1.1318369
McPherson, J. W. (2016) Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics. Journal of Applied Physics, 120 (10). 104102pp. doi:10.1063/1.4962320
Zhao, Larry, Barbarin, Yohan, Croes, Kristof, Baklanov, Mikhail R., Verdonck, Patrick, Tőkei, Zsolt, Claeys, Cor (2015) Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films. Applied Physics Letters, 106 (7). 72902pp. doi:10.1063/1.4913485
Cheung, Kin P. (2003) Temperature effect on ultrathin SiO2 time-dependent-dielectric-breakdown. Applied Physics Letters, 83 (12). 2399-2401 doi:10.1063/1.1613367
McPherson, J. W. (2006) Extended Mie-Grüneisen molecular model for time dependent dielectric breakdown in silica detailing the critical roles of O–SiO3 tetragonal bonding, stretched bonds, hole capture, and hydrogen release. Journal of Applied Physics, 99 (8). 83501pp. doi:10.1063/1.2189930
Furukawa, Taisuke, Yuuki, Akimasa, Ono, Kouichi (1997) Recovery of time-dependent dielectric breakdown lifetime of thin oxide films by thermal annealing. Journal of Applied Physics, 82 (7). 3462-3468 doi:10.1063/1.365662
 
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